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參數(shù)資料
| 型號(hào)： | 2SD2212 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Medium Power Transistor(中等功率晶體管) |
| 中文描述： | 中等功率晶體管（中等功率晶體管） |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 71K |
| 代理商： | 2SD2212 |
2SD2212 / 2SD2143 / 2SD1866 / 2SD2397
Transistors
Medium Power Transistor
(Motor, Relay drive) (60
±
10V, 2A)
2SD2212 / 2SD2143 / 2SD1866 / 2SD2397
!
Features
1) Built-in zener diode between collector and base.
2) Strong protection against reverse surges due to "L"
loads.
3) Built-in resistor between base and emitter.
4) Built-in damper diode.
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
V
CBO
V
CES
V
EBO
I
C
P
C
Tj
Tstg
Limits
60±10
60±10
6
2
3
2
10
1
20
*
2
*
3
150
-55~+150
Unit
V
V
V
A(DC)
A(Pulse)
W
W(Tc=25C)
*
1
W
W(Tc=25C)
C
C
2SD2212
2SD2143
2SD1866
2SD2397
*
1 Single pulse Pw=100ms
*
2 When mounted on a 40
×
40
×
0.7mm ceramic board.
*
3 Printed circuit board 1.7mm thick, collector plating 1cm
2
or larger.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power
dissipation
!
Packaging specifications and h
FE
Type
Package
h
FE
Code
2SD2212
MPT3
1k~10k
T100
1000
2SD2143
CPT3
1k~10k
TL
2500
2SD1866
ATV
1k~10k
TV2
2500
2SD2397
TO-220FN
1k~10k
-
500
Basic ordering unit (pieces)
!
Circuit diagram
R
2
R
1
E :
B :
C :
C
B
E
Emitter
Base
Collector
R
1
3.5k
R
2
300
!
External dimensions
(Units : mm)
2
0
1
0
9.5
2.5
0.8Min.
1.5
6
2
(
(
C0.5
0
0.9
(
0
2
0
1.5
5.5
(3) Emitter(Source)
(2) Collector(Drain)
ROHM : CPT3
EIAJ : SC-63
ROHM : MPT3
EIAJ : SC-62
2SD2143
2SD2212
5
ROHM : ATV
2SD1866
ROHM : TO-220FN
2SD2397
(3) Emitter(Source)
(2) Collector(Drain)
0.75
0.8
2.54
(3)
(1)
(3)
(2)
(1)
2.54
(2)
5
8
1
1
1
1.3
1.2
10.0
3.2
φ
2.6
4.5
2.8
1
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
0
1
0
1
0
3
0
1
(3)
4
(1)
(2)
0.5
4.0
2.5
1.0
0.45
(2) Collector
(3) Base
1.05
Taping specifications
(1) Emitter
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1
1
0
4
2.5
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| 2SD2114K | High-current Gain MediumPower Transistor (20V, 0.5A) |
| 2SD2144 | High-current Gain MediumPower Transistor (20V, 0.5A) |
| 2SD2150-SOT-89 | TRANSISTOR NPN) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2212T100 | 功能描述:達(dá)林頓晶體管 DARL NPN 60V 2A RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2SD2213 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial, Darlington |
| 2SD2213TZ | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial, Darlington |
| 2SD2214 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTORTO-220FA60V 8A 2W BCE |
| 2SD2215 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planar type(Silicon NPN triple diffusion planar type) |
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