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參數(shù)資料
| 型號： | 2SC5333 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN Triple Diffused Planar Transistor(Series Regulator, Switch, and General Purpose) |
| 中文描述： | 2 A, 300 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | FM20, TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 22K |
| 代理商： | 2SC5333 |
134
Silicon NPN Triple Diffused Planar Transistor
Application :
Series Regulator, Switch, and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC5333
300
300
6
2
0.2
35(Tc=25°C)
150
–55to+150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
2SC5333
1.0
max
1.0
max
300
min
30
min
1.0
max
10
typ
75
typ
Unit
mA
mA
V
V
MHz
pF
Conditions
V
CB
=300V
V
EB
=6V
I
C
=25mA
V
CE
=4V, I
C
=0.5A
I
C
=1.0A, I
B
=0.2A
V
CE
=12V, I
E
=–0.2A
V
CB
=10V, f=1MHz
2S C5333
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
0
0
1
2
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
I
B
=200mA
I
B
=20mA/stop
Safe Operating Area
(Single Pulse)
f
T
–I
E
Characteristics
(Typical)
0
3
2
1
0
0.1
Base Current I
B
(A)
0.2
0.3
C
C
(
I
C
=1A
2A
3
10
1000 2000
100
10
50
100
200
Collector Current I
C
(mA)
D
F
(V
CE
=4V)
Typ
0
2
1
0
1.0
0.8
0.6
0.4
0.2
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
1(sTp
2(em
– ep
(V
CE
=4V)
3
5
10
50
100
500
1000 2000
10
50
200
100
Collector Current I
C
(mA)
D
F
25C
–30C
125C
–0.003
–0.01
–0.05
–0.1
–0.5
–1
10
20
C
T
(
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
Typ
θ
j-a
–t
Characteristics
Pc–Ta Derating
0.3
1
4
0.5
1
10
100
1000
Time t(ms)
T
θ
j
(
35
30
20
10
2
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
100
100
1.0
R
L
(
)
I
C
(A)
I
B2
(A)
–0.2
t
on
(
μ
s)
0.3
typ
t
stg
(
μ
s)
4.0
typ
t
f
(
μ
s)
1.0
typ
I
(A)
0.1
External Dimensions
FM20(TO220F)
3.3
±0.2
10.1
±0.2
4
±
1
±
1
8
±
0
±
3
±
2.54
2.54
1.35
±0.15
0.85
+0.2
-0.1
1.35
±0.15
2.2
±0.2
4.2
±0.2
2.8
c0.5
2.4
±0.2
0.45
+0.2
-0.1
B
E
C
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
V
(V)
–5
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5335 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type(For low-frequency output amplification) |
| 2SC5335(TENTATIVE) | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type |
| 2SC5336 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
| 2SC5336(NE856M02) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5336-AZ | 功能描述:RF TRANSISTOR NPN SOT-89 制造商:cel 系列:- 包裝:剪帶 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:12V 頻率 - 躍遷:6.5GHz 噪聲系數(shù)（dB，不同 f 時的典型值）:1.8dB @ 1GHz 增益:12dB 功率 - 最大值:1.2W 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:50 @ 20mA，10V 電流 - 集電極（Ic）（最大值）:100mA 安裝類型:表面貼裝 封裝/外殼:TO-243AA 供應商器件封裝:- 標準包裝:1 |
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