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參數(shù)資料
| 型號： | 2SC5383 |
| 廠商： | ISAHAYA ELECTRONICS CORPORATION |
| 英文描述： | FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(Ultra super mini type) |
| 中文描述： | 低頻放大應(yīng)用硅npn型外延型（超超迷你型） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 220K |
| 代理商： | 2SC5383 |
DESCRIPTION
2SC5383 is a ultra super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency voltage application.
.
FEATURE
●
Small collector to emitter saturation voltage.
VCE(sat)=0.3V max（@Ic=100mA,IB=10mA）
●Excellent linearity of DC forward gain.
●Ultra super mini package for easy mounting
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
※） It shows hFE classification in below table.
〈SMALL-SIGNAL TRANSISTOR〉
2SC5383
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE(Ultra super mini type)
OUTLINE DRAWING
Unit：ｍｍ
MAXIMUM RATINGS
（Ta=25℃）
Symbol
Parameter
Ratings
Unit
V
CBO
Collector to Base voltage
50
V
V
CEO
Collector to Emitter voltage
50
V
V
EBO
Emitter to Base voltage
6
V
I
O
Collector current
200
mA
P
c
Collector dissipation
150
mW
T
j
Junction temperature
＋150
℃
T
stg
Storage temperature
-55～＋150
℃
ELECTRICAL CHARACTERISTICS
（Ta=25℃）
Limits
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
C to E break down voltage
V(BR)
CEO
I
C
=100μA ,R
BE
=∞
50
-
-
V
Collector cut off current
I
CBO
V
CB
=50V, I
E
=0mA
-
-
0.1
μA
Emitter cut off current
I
EBO
V
EB
=6V, I
C
=0mA
-
-
0.1
μA
DC forward current gain
hFE
V
CE
=6V, I
C
=1mA ※
150
-
800
DC forward current gain
hFE
V
CE
=6V, I
C
=0.1mA
90
-
-
C to E Saturation Vlotage
VCE(sat)
I
C
=100mA ,I
B
=10mA
-
-
0.3
V
Gain bandwidth product
fT
V
CE
=6V, I
E
=-10mA
-
200
-
MHz
Collector output capacitance
Cob
V
CB
=6V, I
E
=0,f=1MHz
-
2.5
-
pF
Noise figure
NF
V
CE
=6V, I
E
=-0.1mA,f=1kHz,RG=2kΩ
-
-
15
dB
JEITA：SC-75A
JEDEC：-
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
ISAHAYA
ELECTRONICS
CORPORATION
Item
Ｅ
Ｆ
Ｇ
ｈＦＥ Item
150～300
250～500
400～800
0
0
～
0
0
0
0
0.4
0.8
0.4
1.6
0
0
1
1
①
②
③
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5383_10 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
| 2SC5384 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini |
| 2SC5384_10 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini |
| 2SC5386 | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC5386(Q,M) | 制造商:Toshiba America Electronic Components 功能描述: |
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