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參數(shù)資料
| 型號： | 2SC5192-T2 |
| 廠商： | NEC Corp. |
| 英文描述： | ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% |
| 中文描述： | 微波低噪聲放大器NPN硅外延晶體管4個引腳微型模具 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 68K |
| 代理商： | 2SC5192-T2 |
2SC5192
3
0
50
Ambient Temperature T
A
(°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free Air
T
T
100
150
100
200
0
1
Collector to Emitter Voltage V
CE
(V)
2
3
4
5
6
7
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
C
C
10
20
30
200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
I
B
= 20 A
0
0.5
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 1 V
C
C
1
0.01
0.05
0.1
0.2
0.5
1
2
5
10
20
100
50
0.1
1
0.2
2
20
50
5
0.5
Collector Current I
C
(mA)
D
F
10
100
100
0
200
V
CE
= 1 V
DC CURENT GAIN vs.
COLLECTOR CURRENT
0
1
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
f = 2 GHz
G
T
10
20
50
2
5
100
1
10
20
50
2
5
100
2
4
6
8
10
0
2
4
6
8
10
Collector Current I
C
(mA)
INSERTION GAIN vs.
COLLECTOR CURRENT
I
2
|
2
V
CE
= 3 V
V
CE
= 1 V
f = 2 GHz
V
CE
= 3 V
V
CE
= 1 V
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SC5193 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD |
| 2SC5193(NE68830) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
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| 2SC5193-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD |
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