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參數(shù)資料
| 型號： | 2SC5192-T2 |
| 廠商： | NEC Corp. |
| 英文描述： | ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% |
| 中文描述： | 微波低噪聲放大器NPN硅外延晶體管4個引腳微型模具 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 68K |
| 代理商： | 2SC5192-T2 |
1994
DATA SHEET
SILICON TRANSISTOR
2SC5192
FEATURES
Low Voltage Operation, Low Phase Distortion
Low Noise
NF = 1.5 dB TYP. @V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Large Absolute Maximum Collector Current
I
C
= 100 mA
4-Pin Mini Mold Package
EIAJ : SC-61
PACKAGE DRAWINGS
(Unit: mm)
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
2SC5192-T1
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 3 (Base), Pin 4 (Emitter) face to perforation
side of the tape.
2SC5192-T2
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 1 (Collector), Pin 2 (Emitter) face to
perforation side of the tape.
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
9
V
Collector to Emitter Voltage
V
CEO
6
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
200
mW
J unction Temperature
T
j
150
C
Storage Temperature
T
stg
–65 to +150
C
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
0
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
2
T
(
0
–
+
0
–
+
0
–
+
0
–
+
0
–
+
(
0
1.5
–0.1
2.8
–0.3
2
1
0
0
4
3
5
5
5
5
1
–
+
Document No. P10402EJ 2V0DS00 (2nd edition)
(Previous No. TD-2485)
Date Published August 1995
Printed in J apan
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| 2SC5193 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD |
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| 2SC5193-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD |
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