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參數(shù)資料
| 型號： | 2SC5136 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 58K |
| 代理商： | 2SC5136 |
2SC5136
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
25
V
Collector to emitter voltage
13
V
Emitter to base voltage
3
V
Collector current
50
mA
Collector power dissipation
80
mW
Junction temperature
150
°
C
°
C
Storage temperature
Note:
Marking is “TI–”.
Tstg
–55 to +150
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
25
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector cutoff current
I
CBO
I
CEO
I
EBO
h
FE
Cob
—
—
100
nA
V
CB
= 15 V, I
E
= 0
V
CE
= 13 V, R
BE
=
∞
V
EB
= 3 V, I
C
= 0
V
CE
= 4 V, I
C
= 20 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CE
= 4 V, I
C
= 20 mA
V
= 4 V, I
C
= 20 mA,
f = 900 MHz
—
—
10
μ
A
Emitter cutoff current
—
—
300
nA
DC current transfer ratio
50
100
180
Collector output capacitance
—
0.85
1.3
pF
Gain bandwidth product
f
T
PG
3.0
3.8
—
GHz
Power gain
7
11
—
dB
Noise figure
NF
—
2.5
4.0
dB
V
= 4 V, I
C
= 5 mA,
f = 900 MHz
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