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參數(shù)資料
| 型號： | 2SC5081 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial Transistor(外延NPN晶體管) |
| 中文描述： | npn型硅外延晶體管（外延npn型晶體管） |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 18K |
| 代理商： | 2SC5081 |
2SC5081
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
15
V
Collector to emitter voltage
8
V
Emitter to base voltage
1.5
V
Collector current
50
mA
Collector power dissipation
100
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
I
C
= 10
μ
A, I
E
= 0
Collector to base breakdown
voltage
V
(BR)CBO
15
—
—
V
Collector cutoff current
I
CBO
I
CEO
I
EBO
h
FE
Cob
—
—
1
μ
A
mA
V
CB
= 12 V, I
E
= 0
V
CE
= 9 V, R
BE
= _
V
EB
= 1.5 V, I
C
= 0
V
CE
= 5 V, I
C
= 20 mA
V
CB
= 5 V, I
E
= 0, f = 1 MHz
V
CE
= 5 V, I
C
= 20 mA
V
= 5 V, I
C
= 20 mA,
f = 900 MHz
—
—
1
Emitter cutoff current
—
—
10
μ
A
DC current transfer ratio
50
90
160
Output capacitance
—
0.4
0.75
pF
Gain bandwidth product
f
T
PG
10.5
13.5
—
GHz
Power gain
15
18
—
dB
Noise figure
NF
—
1.1
2.0
dB
V
= 5 V, I
C
= 5 mA,
f = 900 MHz
Note:
1. Marking of 2SC5081 is “ZD–”.
See characteristic curve of 2SC5080.
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5081ZD-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC5082M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 50MA I(C) | SIP |
| 2SC5082ML | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 50MA I(C) | SIP |
| 2SC5082MM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 50MA I(C) | SIP |
| 2SC5082MN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 50MA I(C) | SIP |
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