參數(shù)資料
型號(hào)： 2SC5100
廠(chǎng)商： SANKEN ELECTRIC CO LTD
元件分類(lèi)： 功率晶體管
英文描述： Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)
中文描述： 8 A, 120 V, NPN, Si, POWER TRANSISTOR
封裝： TO-3PF, FM100, 3 PIN
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 24K
代理商： 2SC5100
126
2S C5100
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area
(Single Pulse)
f
T
–I
E
Characteristics
(Typical)
0
3
2
1
0
0.2
0.4
0.6
0.8
1.0
Base Current I
B
(A)
C
C
(
I
C
=8A
2A
4A
0
8
6
2
4
0
1.5
1.0
0.5
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
1(a m
2CaTp
–Cse
0.2
1
4
0.5
1
10
100
1000
2000
Time t(ms)
T
θ
j
(
80
60
40
20
3.5
00
50
25
75
125
100
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
DC
Without Heatsink
Natural Cooling
100ms
10
5
50
100
150
0.1
1
0.5
10
20
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
0.02
0.1
0.5
1
5
8
20
50
100
200
Collector Current I
C
(A)
D
F
(V
CE
=4V)
Typ
0
0
2
4
6
8
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
100mA
150mA
200mA
3m
75mA
50mA
20mA
I
B
=10mA
(V
CE
=4V)
0.02
0.5
5
8
1
20
50
200
100
0.1
Collector Current I
C
(A)
D
F
125C
25C
–30C
0
–0.1
–1
–8
10
20
40
30
C
T
(
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
Typ
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SA1908)
Application :
Audio and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC5100
160
120
6
8
3
75(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
h
FE
Rank O(50to100), P(70to140), Y(90to180)
2SC5100
10
max
10
max
120
min
50
min
0.5
max
20
typ
200
typ
Unit
μ
A
μ
A
V
V
MHz
pF
Conditions
V
CB
=160V
V
EB
=6V
I
C
=50mA
V
CE
=4V, I
C
=3A
I
C
=3A, I
B
=0.3A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
4.4
1.5
1.5
B
E
C
5.45
±0.1
3.3
±0.2
1
3
1.75
0
±
2.15
1.05
+0.2
-0.1
5.45
±0.1
2
±
1
9
±
5
15.6
±0.2
5.5
±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3
0.8
a
b
External Dimensions
FM100(TO3PF)
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(
)
10
I
C
(A)
4
V
(V)
–5
I
B2
(A)
–0.4
t
on
(
μ
s)
0.13typ
t
stg
(
μ
s)
3.50typ
t
f
(
μ
s)
0.32typ
I
(A)
0.4
V
(V)
10
相關(guān)PDF資料
PDF描述
2SC5101 Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)
2SC5105 Silicon NPN Triple Diffused Planar(三倍擴(kuò)散NPN晶體管)
2SC5124 Silicon NPN Triple Diffused Planar Transistor(High Voltage Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓開(kāi)關(guān)晶體管）)
2SC5130 Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓和高速開(kāi)關(guān)晶體管）)
2SC5136 Silicon NPN Epitaxial
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC5100_01 制造商:SANKEN 制造商全稱(chēng):Sanken electric 功能描述:Silicon NPN Triple Diffused Planar Transistor
2SC5101 制造商:Sanken Electric Co Ltd 功能描述:Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN 140V 10A TO3PF
2SC5101_01 制造商:SANKEN 制造商全稱(chēng):Sanken electric 功能描述:Silicon NPN Triple Diffused Planar Transistor
2SC5103 制造商:ROHM 制造商全稱(chēng):Rohm 功能描述:High speed switching transistor (60V, 5A)
2SC5103_09 制造商:ROHM 制造商全稱(chēng):Rohm 功能描述:High speed switching transistor (60V, 5A)
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