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參數(shù)資料
| 型號(hào)： | 2SC3585 |
| 廠商： | NEC Corp. |
| 英文描述： | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR |
| 中文描述： | 微波低噪聲放大器NPN硅外延TRANSISOR |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 103K |
| 代理商： | 2SC3585 |
DATA SHEET
SILICON TRANSISTOR
2SC3585
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISOR
Document No. P10361EJ4V1DS00 (4th edition)
Date Published March 1997 N
Printed in Japan
1984
DESCRIPTION
The 2SC3585 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. The
2SC3585 features excellent power gain with very low-noise figures. The
2SC3585 employs direct nitride passivated base surface process (DNP
process) which is an NEC proprietary new fabrication technique which
provides excellent noise figures at high current values. This allows
excellent associated gain and very wide dynamic range.
FEATURES
NF
Ga
1.8 dB TYP.
9 dB TYP.
@f = 2.0 GHz
@f = 2.0 GHz
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
20
10
1.5
35
200
150
V
V
V
mA
mW
C
C
65 to +150
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
1.0
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EBO
1.0
A
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
*
50
100
250
V
CE
= 6 V, I
C
= 10 mA
Gain Bandwidth Product
f
T
10
GHz
V
CE
= 6 V, I
C
= 10 mA
Feed-Back Capacitance
C
re
**
0.3
0.8
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21e
2
6.0
8.0
dB
V
CE
= 6 V, I
C
= 10 mA, f = 2.0 GHz
Maximum Available Gain
MAG
10
dB
V
CE
= 6 V, I
C
= 10 mA, f = 2.0 GHz
Noise Figure
NF
1.8
3.0
dB
V
CE
= 6 V, I
C
= 5 mA, f = 2.0 GHz
*
** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.
h
FE
Classification
Pulse Measurement PW 350 s, Duty Cycle 2 %
Class
R43/Q *
R44/R *
R45/S *
Marking
R43
R44
R45
h
FE
50 to 100
80 to 160
125 to 250
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Collector
Emitter
Base
2.8±0.2
2
1
0
0
0
0
0
+
0
0
+
0
0
+
0
0.65
+0.1
0.15
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC3585Q | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC3585R | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 35MA I(C) | SOT-346 |
| 2SC3585R43 | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC3585R44 | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 35MA I(C) | SOT-346 |
| 2SC3585R45 | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3585-A | 功能描述:RF TRANSISTOR NPN SOT-23 制造商:cel 系列:- 包裝:剪帶 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:10V 頻率 - 躍遷:10GHz 噪聲系數(shù)（dB，不同 f 時(shí)的典型值）:1.8dB @ 2GHz 增益:10dB 功率 - 最大值:200mW 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:50 @ 10mA，6V 電流 - 集電極（Ic）（最大值）:35mA 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商器件封裝:- 標(biāo)準(zhǔn)包裝:1 |
| 2SC3585-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR |
| 2SC3585-T1B-A(R) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC3585-T1B-A-S | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC3588-AZ(L) | 制造商:Renesas Electronics 功能描述:Bulk |
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