參數(shù)資料
型號: 2SC3510
廠商: Hitachi,Ltd.
元件分類: 8位微控制器
英文描述: ECONOLINE: RSZ/P - 1kVDC
中文描述: ECONOLINE:RSZ / P - 1kVDC 2kVDC隔離UL94V - 0封裝材料所需的散熱片,無外置。組件所需的環(huán)形磁ContinuousShort電路保護(/ P的后綴)
文件頁數(shù): 3/10頁
文件大?。?/td> 45K
代理商: 2SC3510
2SC3127, 2SC3128, 2SC3510
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
20
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
12
V
I
C
= 1 mA, R
BE
=
Emitter cutoff current
I
EBO
I
CBO
h
FE
Cob
10
μ
A
μ
A
V
EB
= 3 V, I
C
= 0
V
CB
= 12 V, I
E
= 0
V
CE
= 5 V, I
C
= 20 mA
V
CB
= 5 V, I
E
= 0, f = 1 MHz
V
CE
= 5 V, I
C
= 20 mA
V
= 5 V, I
C
= 20 mA,
f = 900 MHz
Collector cutoff current
0.5
DC current transfer ratio
30
90
200
Collector output capacitance
0.9
1.5
pF
Gain bandwidth product
f
T
PG
3.5
4.5
GHz
Power gain
10.5
dB
Noise figure
NF
2.2
dB
V
= 5 V, I
C
= 5 mA,
f = 900 MHz
Maximum Collector Dissipation Curve
600
400
200
0
50
100
150
200
Ambient Temperature Ta (
°
C)
C
2SC3510
2SC3128
2SC3127
DC Current Transfer Ratio vs.
Collector Current
Collector Current I
C
(mA)
1
2
5
10
20
50
100
0
40
80
120
160
200
D
F
V
CE
= 5 V
相關PDF資料
PDF描述
2SC3128 Silicon NPN Epitaxial
2SC3134 NPN Epitaxial Planar Silicon Transistors for F for AF Applications(NPN硅平面外延晶體管)
2SC3135 NPN Epitaxial Planar Silicon Transistors for High-hFE, AF Amp Applications(用于高直流增益,AF放大器應用的NPN硅平面外延晶體管)
2SC3150 POWER TRANSISTORS(3A,800V,50W)
2SC3150 Isolated Flyback Switching Regulator with 9V Output
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