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參數(shù)資料
| 型號(hào)： | 2SC3135 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | NPN Epitaxial Planar Silicon Transistors for High-hFE, AF Amp Applications(用于高直流增益，AF放大器應(yīng)用的NPN硅平面外延晶體管) |
| 中文描述： | 瑞展硅晶體管的高HFE的，自動(dòng)對(duì)焦放大器應(yīng)用（用于高直流增益，自動(dòng)對(duì)焦放大器應(yīng)用的npn型硅平面外延晶體管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 127K |
| 代理商： | 2SC3135 |
71598HA (KT)/3097KI/3135KI/D282KI (KOTO) No.1049-1/4
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1253/2SC3135
High-h
FE
, AF Amp Applications
Ordering number:EN1049D
( ) : 2SA1253
Specifications
Absolute Maximum Ratings
at Ta = 25C
Electrical Characteristics
at Ta = 25C
Package Dimensions
unit:mm
2033
[2SA1253/2SC3135]
Features
· High V
EBO
.
· Wide ASO and high durability against breakdown.
B : Base
C : Collector
E : Emitter
SANYO : SPA
C
C
* : The 2SA1253/2SC3135 are classified by 1mA h
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