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參數(shù)資料
| 型號： | 2SC3127 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 2SC3127 |
2SC3127, 2SC3128, 2SC3510
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
20
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
12
—
—
V
I
C
= 1 mA, R
BE
=
∞
Emitter cutoff current
I
EBO
I
CBO
h
FE
Cob
—
—
10
μ
A
μ
A
V
EB
= 3 V, I
C
= 0
V
CB
= 12 V, I
E
= 0
V
CE
= 5 V, I
C
= 20 mA
V
CB
= 5 V, I
E
= 0, f = 1 MHz
V
CE
= 5 V, I
C
= 20 mA
V
= 5 V, I
C
= 20 mA,
f = 900 MHz
Collector cutoff current
—
—
0.5
DC current transfer ratio
30
90
200
Collector output capacitance
—
0.9
1.5
pF
Gain bandwidth product
f
T
PG
3.5
4.5
—
GHz
Power gain
—
10.5
—
dB
Noise figure
NF
—
2.2
—
dB
V
= 5 V, I
C
= 5 mA,
f = 900 MHz
Maximum Collector Dissipation Curve
600
400
200
0
50
100
150
200
Ambient Temperature Ta (
°
C)
C
2SC3510
2SC3128
2SC3127
DC Current Transfer Ratio vs.
Collector Current
Collector Current I
C
(mA)
1
2
5
10
20
50
100
0
40
80
120
160
200
D
F
V
CE
= 5 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC3510 | ECONOLINE: RSZ/P - 1kVDC |
| 2SC3128 | Silicon NPN Epitaxial |
| 2SC3134 | NPN Epitaxial Planar Silicon Transistors for F for AF Applications(NPN硅平面外延晶體管) |
| 2SC3135 | NPN Epitaxial Planar Silicon Transistors for High-hFE, AF Amp Applications(用于高直流增益，AF放大器應(yīng)用的NPN硅平面外延晶體管) |
| 2SC3150 | POWER TRANSISTORS(3A,800V,50W) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3127ID-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC3128 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-92 20V .05A .35W BEC |
| 2SC312AF | 制造商:SIL 功能描述:2SC312AF TO92 N9H1D |
| 2SC313 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:Silicon NPN Transistor VHF-UHF Amplifier, Mixer/Osc |
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