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參數(shù)資料
| 型號(hào)： | 2SC2899 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管) |
| 中文描述： | 硅npn型三重?cái)U(kuò)散（三倍擴(kuò)散npn型晶體管） |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 44K |
| 代理商： | 2SC2899 |
2SC2899
2
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter sustain
voltage
V
CEO(sus)
400
—
—
V
I
= 0.1 A, R
BE
= _, L = 100
mH
V
CEX(sus)
400
—
—
V
I
C
= 0.5 A, I
= –I
= 0.1 A,
V
= –5 V, L = 180 μH,
Clamped
Emitter to base breakdown
voltage
V
(BR)EBO
10
—
—
V
I
E
= 10 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE1
h
FE2
V
CE(sat)
—
—
20
μA
V
CB
= 400 V, I
C
= 0
V
CE
= 350 V, R
BE
= _
V
CE
= 5 V, I
C
= 0.25 A*
V
CE
= 5 V, I
C
= 0.5 A*
I
C
= 0.25 A, I
B
= 0.05 A*
—
—
50
μA
DC current transfer ratio
15
—
—
1
7
—
—
1
Collector to emitter saturation
voltage
—
—
1.0
V
1
Base to emitter saturation
voltage
V
BE(sat)
—
—
1.5
V
Turn on time
t
on
—
—
1.0
μs
I
C
= 0.5 A, I
B1
= –I
B2
= 0.1 A,
V
CC
150 V
Storage time
t
stg
t
f
—
—
2.0
μs
Fall time
Note:
—
—
1.0
μs
1. Pulse test
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