參數(shù)資料
型號(hào): 2SC2712Y
英文描述: TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23
中文描述: 晶體管|晶體管|叩| 50V五(巴西)總裁| 150毫安一(c)| SOT - 23封裝
文件頁(yè)數(shù): 3/4頁(yè)
文件大?。?/td> 66K
代理商: 2SC2712Y
3
Transistor
2SC2778
C
ob
— V
CB
b
ie
— g
ie
b
re
— g
re
b
fe
— g
fe
b
oe
— g
oe
1
3
10
30
100
0
3.2
2.4
0.8
2.0
2.8
1.6
0.4
1.2
I
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
C
o
0
20
16
4
12
8
0
12
10
8
6
4
2
y
ie
=g
+jb
ie
V
CE
=10V
f=0.45MHz
–1mA
58
25
10.7
100
I
E
=– 0.1mA
Input conductance g
ie
(mS)
I
i
– 0.5
0
– 0.1
– 0.4
– 0.2
– 0.3
–3.0
0
– 0.5
–1.0
–1.5
–2.0
–2.5
y
re
=g
+jb
re
V
CE
=10V
f=0.4510.7
I
E
=–7mA
–2mA
–4mA
–1mA
– 0.4mA
25
58
100
Reverse transfer conductance g
re
(mS)
R
r
0
100
80
20
60
40
–120
0
–20
–40
–60
–80
–100
y
fe
=g
+jb
fe
V
CE
=10V
f=0.45MHz
10.7
10.7
10.7
–1mA
0.45
– 0.4mA
–2mA
–4mA
I
E
=–7mA
100
100
100
100
58
25
25
25
58
58
58
Forward transfer conductance g
fe
(mS)
F
f
0
1.0
0.8
0.2
0.6
0.4
0
1.2
1.0
0.8
0.6
0.4
0.2
y
oe
=g
+jb
oe
V
CE
=10V
f=0.45MHz
I
E
=– 0.1mA
–7mA
–4mA
–2mA
–1mA
– 0.4mA
58
10.7
25
100
Output conductance g
oe
(mS)
O
o
相關(guān)PDF資料
PDF描述
2SC2713BL TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SOT-23
2SC2713GR TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SOT-23
2SC2714O TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 20MA I(C) | SC-59
2SC2714R TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 20MA I(C) | SC-59
2SC2714Y TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 20MA I(C) | SC-59
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC2712-Y 功能描述:兩極晶體管 - BJT INCORRECT MOUSER P/N RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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2SC2712-Y(T5L,T) 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 50V 0.15A 3-Pin S-Mini T/R
2SC2712-Y(TE85L) 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 50V 0.15A 3-Pin S-Mini T/R
2SC2712-Y(TE85L,F) 功能描述:兩極晶體管 - BJT 150mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2