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參數(shù)資料
| 型號： | 2SC2148 |
| 廠商： | NEC Corp. |
| 英文描述： | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 中文描述： | 微波低噪聲放大器NPN硅外延晶體管 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 52K |
| 代理商： | 2SC2148 |
2SC2148, 2SC2149
5
2SC2149
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T(T
A
= 25
°
C)
P
T(Tc = 140
°
C)
T
j
T
stg
25
12
3.0
70
290
500
200
V
V
V
mA
mW
mW
°
C
°
C
65 to +150
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
0.1
μ
A
V
CB
= 15 V, I
E
= 0
Emitter Cutoff Current
I
EBO
0.1
μ
A
V
EB
= 2.0 V, I
C
= 0
DC Current Gain
h
FE
30
70
200
V
CE
= 10 V, I
C
= 20 mA
Gain Bandwidth Product
f
T
5.0
GHz
V
CE
= 10 V, I
C
= 20 mA
Output Capacitance
*
C
ob
0.6
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
12.7
dB
f = 1.0 GHz
Insertion Gain
S
21e
2
5.0
6.7
dB
V
CE
= 10 V, I
C
= 20 mA
f = 2.0 GHz
1.7
dB
f = 1.0 GHz
Noise Figure
NF
2.6
4.0
dB
V
CE
= 10 V, I
C
= 5.0 mA
f = 2.0 GHz
17
dB
f = 1.0 GHz
Maximum Available Gain
MAG
11
dB
V
CE
= 10 V, I
C
= 20 mA
f = 2.0 GHz
*
The emitter terminal should be connected to the guard terminal of the three-terminal capacitance bridge.
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
100
50
20
10
0.5
1
5
10
50 70
I
C
Collector Current
mA
V
CE
= 10 V
h
F
D
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
70
50
20
10
5
2
1
0.5
0.5
0.6
0.7
0.8
0.9
V
BE
Base to Emitter Voltage
V
V
CE
= 10 V
I
C
C
m
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC2149 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC2150 | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC2181 | TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 10A I(C) | SOT-123VAR |
| 2SC2194A | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-202 |
| 2SC2790A | TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 2A I(C) | TO-3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC2149 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:SILICON TRANSISTR |
| 2SC2150 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 11V V(BR)CEO | 30MA I(C) | SOT-173 |
| 2SC2151 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2SC2166 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:Silicon NPN Transistor Final RF Power Output |
| 2SC2167 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
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