1
Publication date: August 2003
SJC00052CED
Transistors
2SB0767 (2SB767)
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SD0875 (2SD875)
■ Features
Large collector power dissipation P
C
High collector-emitter voltage (Base open) VCEO
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
80
V
Collector-emitter voltage (Base open)
VCEO
80
V
Emitter-base voltage (Collector open)
VEBO
5V
Peak collector current
ICP
1A
Collector current
IC
0.5
A
Collector power dissipation *
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
0.1
A
Collector-base voltage (Emitter open)
VCBO
IC
= 10 A, I
E
= 0
80
V
Collector-emitter voltage (Base open)
VCEO
IC = 100 A, IB = 0
80
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 0
5V
Forward current transfer ratio *1
hFE1 *2
VCE
= 10 V, I
C
= 150 mA
90
220
hFE2
VCE = 5 V, IC = 500 mA
50
100
Collector-emitter saturation voltage *1
VCE(sat)
IC = 300 mA, IB = 30 mA
0.2
0.4
V
Base-emitter saturation voltage *1
VBE(sat)
IC
= 300 mA, I
B
= 30 mA
0.85 1.20
V
Transition frequency
fT
VCB = 10 V, IE = 50 mA, f = 200 MHz
120
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
20
30
pF
(Common base, input open circuited)
Note) *: Print circuit board: Copper foil area of 1 cm2 or more, and the board
thickness of 1.7 mm for the collector portion.
■ Electrical Characteristics T
a = 25°C ± 3°C
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Unit: mm
Marking Symbol: C
Note) The part numbers in the parenthesis show conventional part number.
4.5±0.1
3.0±0.15
45
2.6
±
0.1
0.4
max.
1.6±0.2
1.5±0.1
4.0
2.5
±
0.1
3
+0.25 –0.20
1.0
+0.1 –0.2
0.5±0.08
0.4±0.04
0.4±0.08
12
3
1.5±0.1
3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
hFE1
90 to 155
130 to 220
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en