參數(shù)資料
型號(hào): 2SC4672T100
元件分類: 小信號(hào)晶體管
英文描述: 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: MPT3, 3 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 65K
代理商: 2SC4672T100
2SC4672
Transistors
Rev.C
1/2
Low Frequency Transistor (50V, 3A)
2SC4672
Features
1) Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA.
2) Excellent DC current gain characteristics.
3) Complements the 2SA1797.
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
60
50
6
3
0.5
2
150
55 to +150
Unit
V
A (DC)
6
A (Pulse)
1
2
W
°C
1 Single pulse, Pw=10ms
2 40×40× 0.7mm Ceramic board
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
t
Packaging specifications and hFE
Type
2SC4672
MPT3
PQ
T100
1000
Package
hFE
Code
Basic ordering unit (pieces)
Marking
DK
Denotes hFE
hFE values are classified as follows:
Item
P
Q
hFE
82 to 180
120 to 270
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
2
fT
Cob
60
50
6
45
0.13
210
25
0.1
0.35
V
A
V
MHz
pF
IC
=50A
IC
=1mA
IE
=50A
VCB
=60V
VEB
=5V
IC/IB
=1A/50mA
VCE
=2V, IC=1.5A
VCE
=2V, IE=0.5A, f=100MHz
VCB
=10V, IE=0A, f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
hFE
1
82
270
VCE
=2V, IC=0.5A
Measured using pulse current.
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2SC4672T100Q 功能描述:兩極晶體管 - BJT NPN 50V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC4672T200Q 制造商:ROHM Semiconductor 功能描述:
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