參數(shù)資料
型號: 2SB1390
廠商: Hitachi,Ltd.
英文描述: Silicon PNP Triple Diffused
中文描述: 三重擴散硅進步黨
文件頁數(shù): 3/6頁
文件大?。?/td> 36K
代理商: 2SB1390
2SB1390
3
Maximum Collector Dissipation Curve
30
20
10
0
50
100
150
Case temperature T
C
(
°
C)
C
C
–30
–10
–3
C
C
–1.0
–0.3
–0.1
–0.03
–1.0
–300
–0.3
–3
–30
–100
–10
Collector to emitter voltage V
CE
(V)
Ta = 25
°
C
1 Shot Pulse
D prtnT
C
5
°
C
P 0m
1
μ
s
Area of Safe Operation
i
C(peak)
I
C(max)
1
μ
s
T
C
= 25
°
C
I
B
= 0
–1.0
–1.5
–2
–2.5
–3
–3.5
–5
–10
–8
–6
–4
–2
0
–1
C
C
–2
Collector to emitter voltage V
CE
(V)
–3
–5
–4
Typical Output Characteristics
I
B
= –0.5 mA
P
C
=25W
–4
–4.5
10000
5000
2000
1000
500
200
100
–0.1 –0.2
–1.0
–5
D
F
–0.5
Collector current I
C
(A)
–2
–10
T
C
=75
°
C
25
°
C
–25
°
C
V
CE
= –3 V
DC Current Transfer Ratio vs.
Collector Current
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