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參數(shù)資料
| 型號： | 2SB1386L-X-AB3-F-R |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | LOW FREQUENCY PNP TRANSISTOR |
| 中文描述： | 低頻PNP晶體管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 208K |
| 代理商： | 2SB1386L-X-AB3-F-R |
2SB1386
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R208-019,B
ABS OLUT E MAX IMUM RAT INGS
( Ta=25
°
C ,unless otherwise specified )
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(PULSE)
P
C
T
J
T
STG
RATINGS
-30
-20
-6
-5
-10
0.5
150
-55 ~ +150
UNIT
V
V
V
A
A
W
℃
℃
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector Current (DC)
Collector Current (Pulse)(Note1)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Note 1. Single pulse, Pw=10ms
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECT RICAL CHARACT ERIST ICS
(Ta=25
°
C, unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
I
CBO
I
EBO
h
FE
f
T
Cob
TEST CONDITIONS
I
C
= -50
μ
A
I
C
= -1mA
I
E
= -50
μ
A
I
C
/I
B
= -4A/-0.1A
V
CB
= -20V
V
EB
= -5V
V
CE
= -2V, I
C
= -0.5A
V
CE
= -6V, I
E
= 50mA, f=30MHz
V
CB
= -20V, I
E
= 0A, f=1MHz
MIN
-30
-20
-6
82
TYP
120
60
MAX
-1.0
-0.5
-0.5
390
UNIT
V
V
V
V
μ
A
μ
A
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Output Capacitance
MHz
pF
CLAS S IFICAT ION OF h
FE
RANK
RANGE
P
Q
R
82-180
120-270
180-390
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1386-P-AB3-B-R | LOW FREQUENCY PNP TRANSISTOR |
| 2SB1386-P-AB3-C-R | LOW FREQUENCY PNP TRANSISTOR |
| 2SB1386-P-AB3-E-R | LOW FREQUENCY PNP TRANSISTOR |
| 2SB1386-Q-AB3-B-R | LOW FREQUENCY PNP TRANSISTOR |
| 2SB1386-Q-AB3-C-R | LOW FREQUENCY PNP TRANSISTOR |
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