參數(shù)資料
型號(hào): 2SB1386-X-AB3-F-R
廠商: 友順科技股份有限公司
英文描述: LOW FREQUENCY PNP TRANSISTOR
中文描述: 低頻PNP晶體管
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 208K
代理商: 2SB1386-X-AB3-F-R
2SB1386
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R208-019,B
T Y PICAL CHARACTERIST ICS
0
-0.2
Base to Emitter Voltage, V
BE
(V)
-2
-1
-1m
Collector Current vs. Base to Emitter
Voltage
-1m-2m-5m
-0.01-0.02
200
100
20
10
Collector Current, Ic(A)
DC Current Gain vs. Collector Current(1)
5k
Ta=25
-0.4 -0.6 -0.8
-1.4
-1.2
-1.0
-2m
-5m
0
-5
0
Collector to Emitter Voltage, V
CE
(V)
Collector Current vs. Collector to Emitter
Voltage
-1
-0.4
-0.8
-1.6
-2.0
-1.2
-2
-3
-4
I
B
=0mA
Ta=25
-10mA
-5mA
-0.05 -0.1-0.2
-0.5-1
500
Collector-Emitter Saturation Voltage vs.
Collector Current (1)
-10m
-30mA
-45mA
-50mA
-15mA
-20mA
-25mA
5
-2
-0.2
-0.05
-0.1
-0.5
-0.02
-0.01
Collector Current, Ic(A)
-1
-2
-20m
-50m
-100m
-200m
-500m
-5
-10
V
CE
= -2V
Ta=25
Ta=100
Ta= -25
-40mA
-35mA
-5 -10
50
1k
2k
Vc
E
= -5V
Vc
E
= -2V
Vc
E
= -1V
-1m-2m-5m
-0.01-0.02
200
100
20
10
Collector Current, I
C
(A)
DC Current Gain vs. Collector Current(2)
5k
-0.05 -0.1-0.2
-0.5-1
500
5
-2 -5 -10
50
1k
2k
Vc
E
= -1V
Ta=100
-1m-2m-5m
-0.01-0.02
200
100
20
10
Collector Current, Ic(A)
DC Current Gain vs. Collector Current
-0.05 -0.1-0.2
-0.5-1
500
5k
5
-2 -5 -10
50
1k
2k
Vc
E
= -2V
Ta=25
Ta=25
Ta= -25
Ta=100
Ta= -25
-2m -5m
-0.01-0.02-0.05 -0.1
-0.5-1 -2 -5 -10
-0.2
-5
Ta=25
Ic/I
B
=50/1
40/1
30/1
10/1
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