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參數(shù)資料
| 型號(hào)： | 2SB1260-X-TN3-R |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | POWER TRANSISTOR |
| 中文描述： | 功率晶體管 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | 2SB1260-X-TN3-R |
2SB1260
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R208-017,C
T Y PICAL CHARACT ERICS
0
-0.2
-1000
-0.1
Base to Emitter Voltage, V
BE
(V)
Grounded Emitter Propagation
Characteristics
C
-1 -2
-5 -10-20
Collector Current, Ic(mA)
200
50
DC Current Gain vs. Collector
Current
D
F
100
-0.4 -0.6 -0.8
-1.6
-1.4
-1.2
-1.0
-1
-10
0
-1.0
0
Collector to Emitter Voltage, V
CE
(V)
Grounded Emitter Output
Characteristics
C
-0.2
-0.4
-0.8
-1.6
-2.0
-1.2
-0.4
-0.6
-0.8
I
B
=0mA
-1.8
Ta=25
-0.15mA
-0.1mA
-0.05mA
-50-100-200-500-1000
500
1000
1
2
5 10 20
Emitter Current, I
E
(mA)
5
1
Collector-emitter Saturation Voltage
vs. Collector Current
C
C
(
2
50 100200 5001000
10
20
50
100
Collector to Base Voltage, V
CB
(V)
Collector Output Capacitance vs.
Collector-Base Voltage
C
-100
V
CE
= -5V
Ta=25
-0.2
-0.6
-1.0
-1.4
-0.2mA
-0.25mA
-0.3mA
-0.35mA
-0.4mA
-0.45mA
20
10
-2000
Vc
E
= -1V
Vc
E
= -3V
Ta=25
-1 -2
-5 -10-20
Collector Current, Ic(mA)
-0.2
-0.05
-0.1
-50-100-200-500-1000
-0.5
-0.02
-0.01
-2000
-1
-2
Ta=25
Ic/I
B
=20
10
T
T
(
200
500
1000
Ta=25
V
CE
= -5V
Gain Bandwidth Product vs. Emitter
Current
-0.1 -0.2 -0.5-1 -2
5
1
2
-5 -10 -20
-50 -100
10
20
50
100
200
500
Ta=25
f=1MHz
I
E
=0A
1000
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