參數(shù)資料
型號： 2SB1258
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon PNP Epitaxial Planar Transistor（Darlington）(硅PNP外延平面晶體管（達(dá)林頓）)
中文描述： 6 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封裝： TO-220F, FM20, 3 PIN
文件頁數(shù)： 1/1頁
文件大?。?/td> 25K
代理商： 2SB1258
39
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
0
0
–2
–1
–4
–3
–6
–5
–2
–6
–4
–1
Collector-Emitter Voltage V
CE
(V)
–5
–3
C
C
(
I
B
=–34mA
–2.4mA
–2.0mA
–1.8mA
–1.2mA
–0.9mA
Safe Operating Area
(Single Pulse)
f
T
–I
E
Characteristics
(Typical)
–0.6
–3
–2
–1
–0.5
–1
–10
–200
–100
Base Current I
B
(mA)
C
C
(
–4A
–6A
I
C
=–2A
–0.03
–0.1
–1
–0.5
–6
Collector Current I
C
(A)
D
F
(V
CE
=–4V)
500
8000
5000
1000
Typ
0.5
5
1
1
10
100
1000
Time t(ms)
T
θ
j
(
0.05
0.1
0.5
1
5 6
60
40
0
20
100
120
80
C
T
(
Z
)
(V
CE
=–12V)
Emitter Current I
E
(A)
Typ
–10
–50
–5
–3
–100
–200
–0.05
–1
–0.5
–0.1
–10
–20
–5
Collector-Emitter Voltage V
CE
(V)
C
C
(
DC
10
μ
s
50
μ
s
30
20
10
2
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
50x50x2
100x100x2
150x150x2
WthIninteheasnk
Without Heatsink
1m
1m
Without Heatsink
Natural Cooling
0
–6
–2
–3
–4
–5
–1
0
–2.2
–2
–1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=–4V)
1Cee)
2 se
–Cse
(V
CE
=–4V)
–0.03
–0.1
–0.5
–6
–1
30
100
5000
500
1000
8000
Collector Current I
C
(A)
D
F
25C
–30C
125C
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD1785)
Application :
Driver for Solenoid, Relay and Motor and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1258
–100
–100
–6
–6(
Pulse
–10)
–1
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SB1258
–10
max
–10
max
–100
min
1000
min
–1.5
max
–2
max
100typ
100typ
Unit
μ
A
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=–100V
V
EB
=–6V
I
C
=–10mA
V
CE
=–2V, I
C
=–3A
I
C
=–3A, I
B
=–6mA
I
C
=–3A, I
B
=–6mA
V
CE
=–12V, I
E
=0.2A
V
CB
=–10V, f=1MHz
Darlington
2S B1258
(Ta=25°C)
(Ta=25°C)
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–30
10
–3
R
L
(
)
I
C
(A)
V
(V)
5
I
(mA)
6
t
on
(
μ
s)
0.6typ
t
stg
(
μ
s)
1.6typ
t
f
(
μ
s)
0.5typ
I
(mA)
–6
V
(V)
–10
3.3
±0.2
10.1
±0.2
4
±
1
±
1
8
±
0
±
3
±
2.54
2.54
1.35
±0.15
0.85
+0.2
-0.1
1.35
±0.15
2.2
±0.2
4.2
±0.2
2.8
c0.5
2.4
±0.2
0.45
+0.2
-0.1
B
E
C
a
b
External Dimensions
FM20(TO220F)
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B
C
E
(3k
)(100
)
Equivalent circuit
相關(guān)PDF資料
PDF描述
2SB1259 Silicon PNP Epitaxial Planar Transistor（Darlington）(硅PNP外延平面晶體管（達(dá)林頓）)
2SB1260-Q-TN3-R POWER TRANSISTOR
2SB1260L-P-AB3-B POWER TRANSISTOR
2SB1260L-P-AB3-K POWER TRANSISTOR
2SB1260L-P-AB3-R POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB1259 制造商:Sanken Electric Co Ltd 功能描述:Trans Darlington PNP 120V 10A 3-Pin (3+Tab) TO-220F Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS PNP DARL 120V 10A TO220F 制造商:Allegro MicroSystems 功能描述:Trans Darlington PNP 120V 10A 3-Pin(3+Tab) TO-220F
2SB1260FRAT100R 制造商:ROHM Semiconductor 功能描述:
2SB1260T100 制造商:Rohm 功能描述:PNP Cut Tape
2SB1260T100P 功能描述:兩極晶體管 - BJT DVR PNP 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SB1260T100Q 功能描述:兩極晶體管 - BJT PNP 80V 1A SO-89 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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