參數(shù)資料
型號： 2SB1259
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon PNP Epitaxial Planar Transistor（Darlington）(硅PNP外延平面晶體管（達林頓）)
中文描述： 10 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封裝： TO-220F, FM20, 3 PIN
文件頁數(shù)： 1/1頁
文件大小： 26K
代理商： 2SB1259
40
3.3
±0.2
10.1
±0.2
4
±
1
±
1
8
±
0
±
3
±
2.54
2.54
1.35
±0.15
0.85
+0.2
-0.1
1.35
±0.15
2.2
±0.2
4.2
±0.2
2.8
c0.5
2.4
±0.2
0.45
+0.2
-0.1
B
E
C
a
b
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1259
–120
–120
–6
–10(
Pulse
–15)
–1
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SB1259
–10
max
–10
max
–120
min
2000
min
–1.5
max
–2.0
max
100typ
145typ
Unit
μ
A
mA
V
V
V
MHz
pF
Conditions
V
CB
=–120V
V
EB
=–6V
I
C
=–10mA
V
CE
=–4V, I
C
=–5A
I
C
=–5A, I
B
=–10mA
I
C
=–5A, I
B
=–10mA
V
CE
=–12V, I
E
=0.2A
V
CB
=–10V, f=1MHz
Darlington
2S B1259
(Ta=25°C)
(Ta=25°C)
External Dimensions
FM20(TO220F)
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2081)
Application :
Driver for Solenoid, Relay and Motor and General Purpose
Weight : Approx 2.0g
a. Type No.
b. Lot No.
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
0
0
–5
–10
–15
–2
–1
Collector-Emitter Voltage V
CE
(V)
–6
–5
–4
–3
C
C
(
–50mA
–10mA
–5mA
–3mA
–2mA
I
B
=–1mA
–20mA
Safe Operating Area
(Single Pulse)
f
T
–I
E
Characteristics
(Typical)
0
–3
–2
–1
–1
–1000
–10
–100
Base Current I
B
(mA)
C
C
(
–1A
–5A
I
C
=–10A
–0.03
–0.1
–0.5
–1
–10
–5
Collector Current I
C
(A)
D
F
(V
CE
=–4V)
50
100
500
10000
5000
1000
20000
Typ
0.3
0.5
5
1
1
10
100
1000
Time t(ms)
T
θ
j
(
–10
–50
–5
–3
–100
–200
–0.03
–0.05
–1
–0.5
–0.1
–10
–20
–5
Collector-Emitter Voltage V
CE
(V)
C
C
(
DC
100
μ
s
10m
1m
Without Heatsink
Natural Cooling
30
20
10
2
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
50x50x2
100x100x2
150x150x2
WthIninteheasnk
Without Heatsink
0
–10
–4
–6
–8
–2
0
–2.2
–2
–1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=–4V)
1CaTp
2CaTp
–CaTp
(V
CE
=–4V)
–0.02
–0.1
–0.5
–10
–5
–1
20
100
50
5000
500
1000
20000
10000
Collector Current I
C
(A)
D
F
25C
–30C
125C
0.05
0.1
0.5
1
5
10
100
0
200
C
T
(
Z
)
(V
CE
=–12V)
Emitter Current I
E
(A)
Typ
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–30
10
–3
R
L
(
)
I
C
(A)
V
(V)
5
I
(mA)
6
t
on
(
μ
s)
0.6typ
t
stg
(
μ
s)
1.6typ
t
f
(
μ
s)
0.5typ
I
(mA)
–6
V
(V)
–10
B
C
E
(3k
)(100
)
Equivalent circuit
相關(guān)PDF資料
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2SB1260FRAT100R 制造商:ROHM Semiconductor 功能描述:
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2SB1260T100P 功能描述:兩極晶體管 - BJT DVR PNP 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SB1260T100Q 功能描述:兩極晶體管 - BJT PNP 80V 1A SO-89 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SB1260T100R 功能描述:兩極晶體管 - BJT PNP 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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