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參數(shù)資料
| 型號(hào)： | 2SB1048 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial, Darlington |
| 中文描述： | 硅外延進(jìn)步黨，達(dá)林頓 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 31K |
| 代理商： | 2SB1048 |
2SB1048
3
0
50
100
150
Ambient Temperature Ta (
°
C)
C
(
Maximum Collector Dissipation Curve
1.2
0.8
0.4
Area of Safe Operation
–0.01
–0.03
–0.1
–3
–10
–0.3
–1.0
Collector to Emitter Voltage V
CE
(V)
C
C
–3
–10
–30
–100
–300
Ta = 25
°
C
1 Shot Pulse
i
C
(peak)
1
μ
s
1m
PW=10ms
Typical Output Characteristics
Collector to Emitter Voltage V
CE
(V)
C
C
0
–2
–4
–6
–8
–10
–1.0
–0.8
–0.6
–0.4
–0.2
I
B
= 0 A
Ta = 25
°
C
P
C
W
–1m
–0.6 m
–0.2 m
–0.1 m
–0.04 m
–0.02 m
–0.01 m
DC Current Transfer Ratio vs.
Collector Current
Collector Current I
C
(mA)
–30
–100
–300
–1,000
–3,000
100
300
1,000
3,000
10,000
30,000
100,000
D
F
V
= –3 V
Pulse
Ta = 75
°
C
25
–25
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