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參數(shù)資料
| 型號： | 2SB1048 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial, Darlington |
| 中文描述： | 硅外延進步黨，達林頓 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 31K |
| 代理商： | 2SB1048 |
2SB1048
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
*
1
P
C
*
2
Tj
–60
V
Collector to emitter voltage
–60
V
Emitter to base voltage
–7
V
Collector current
–1
A
Collector peak current
–2
A
Collector power dissipation
1
W
Junction temperature
150
°
C
°
C
Storage temperature
Notes: 1. PW
≤
10 ms, Duty cycle
≤
20%
2. Value on the alumina ceramic board (12.5
×
30
×
0.7 mm)
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–60
—
—
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–60
—
—
V
I
C
= –1 mA, R
BE
=
∞
Collector cutoff current
I
CBO
I
EBO
h
FE
V
CE(sat)
—
—
–10
μ
A
μ
A
V
CB
= –60 V, I
E
= 0
V
EB
= –7 V, I
E
= 0
V
CE
= –3 V, I
C
= –500 mA*
1
I
C
= –500 mA, I
B
= –1 mA*
1
Emitter cutoff current
—
—
–10
DC current transfer ratio
2000
—
100000
Collector to emitter saturation
voltage
—
—
–2.0
V
Base to emitter saturation
voltage
Notes: 1. Pulse test
2. Marking is “BT”
V
BE(sat)
—
—
–2.0
V
I
C
= –500 mA, I
B
= –1 mA*
1
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