參數(shù)資料
型號(hào): 2SA2061
廠商: Toshiba Corporation
英文描述: Silicon PNP Epitaxial Type
中文描述: 硅外延式進(jìn)步黨
文件頁數(shù): 3/5頁
文件大?。?/td> 169K
代理商: 2SA2061
2SA2061
2001-10-29
3
Base-emitter voltage V
BE
(V)
C
C
B
V
B
Collector-emitter voltage V
CE
(V)
I
C
– V
CE
C
C
Collector current I
C
(A)
h
FE
– I
C
D
F
Collector current I
C
(A)
V
CE (sat)
– I
C
C
V
C
Collector current I
C
(A)
V
BE (sat)
– I
C
I
C
– V
BE
Common emitter
β
=
30
Single nonrepetitive pulse
0.001
0.01
0.1
1
0.001
0.003
0.01
0.03
0.1
0.3
1
3
Ta
=
100°C
25
55
Common emitter
β
=
30
Single nonrepetitive pulse
0.01
0.001
0.003
0.1
1
10
0.01
0.03
0.1
0.3
1
3
Ta
=
100°C
55
25
Common emitter
VCE
=
2 V
Single nonrepetitive pulse
10
0.001
0.003
100
1000
10000
0.01
0.03
0.1
0.3
1
3
Ta
=
100°C
55
25
0
0
6
5
4
3
2
1
0.4
0.8
1.2
2
1.6
Common emitter
Ta
=
25°C
Single nonrepetitive pulse
40
20
15
IB
=
10 mA
30
50
60
80
0
0.4
0.8
1.2
1.6
0
1
2
3
4
5
Common emitter
VCE
=
2 V
Single nonrepetitive pulse
55
25
Ta
=
100°C
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