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參數(shù)資料
| 型號(hào)： | 2SA2061 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon PNP Epitaxial Type |
| 中文描述： | 硅外延式進(jìn)步黨 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 169K |
| 代理商： | 2SA2061 |
2SA2061
2001-10-29
1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2061
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
High DC current gain: h
FE
= 200 to 500 (I
C
= 0.5 A)
Low collector-emitter saturation voltage: V
CE (sat)
=
0.
1
9 V (max)
High-speed switching: t
f
= 40 ns (typ.)
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
20
V
Collector-emitter voltage
V
CEO
20
V
Emitter-base voltage
V
EBO
7
V
DC
I
C
2.5
Collector current
Pulse
I
CP
4.0
A
Base current
I
B
250
mA
t = 10 s
1000
Collector power
dissipation
DC
P
C
(Note)
625
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm
2
)
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
=
20 V, I
E
= 0
―
―
100
nA
Emitter cut-off current
I
EBO
V
EB
=
7 V, I
C
= 0
―
―
100
nA
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
=
10 mA, I
B
= 0
20
―
―
V
h
FE
(1)
V
CE
=
2 V, I
C
= 0.5 A
200
―
500
DC current gain
h
FE
(2)
V
CE
=
2 V, I
C
=
1.6 A
100
―
―
Collector-emitter saturation voltage
V
CE (sat)
I
C
=
1.6 A, I
B
=
53 mA
―
―
0.19
V
Base-emitter saturation voltage
V
BE (sat)
I
C
=
1.6 A, I
B
=
53 mA
―
―
1.10
V
Collector output capacitance
C
ob
V
CB
=
10 V, I
E
= 0, f = 1 MHz
―
28
―
pF
Rise time
t
r
―
70
―
Storage time
t
stg
―
150
―
Switching time
Fall time
t
f
See Figure 1 circuit diagram.
V
CC
≈
12 V, R
L
= 7.5
I
B1
= I
B2
=
53 mA
―
40
―
ns
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 0.01 g (typ.)
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