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參數(shù)資料
| 型號(hào)： | 2SA1194K |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進(jìn)步黨 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 2SA1194K |
2SA1194(K)
3
–0.01
–200
–400
–600
–800
–1,000
Collector to emitter Voltage V
CE
(V)
C
C
0
–6
–4
–8
–2
–10
Typical Output Characteristics
T
C
= 25
°
C
–1.0
–0.6
–0.4
–0.2
–0.1
–0.04
–0.06
–0.08
–0.02
–0.01 mA
–0.8
P
c
=8W
I
B
= 0
100
1,000
3,000
10,000
30,000
100,000
300
Collector current I
C
(mA)
D
F
–10
–1,000
–300
–100
–30
DC Current Transfer Ratio vs.
Collector Current
Ta = 75
°
C
25
°
C
V
= –3 V
Pulse
–0.1
–0.3
–1.0
–3
–10
Collector current I
C
(mA)
–10
–30
–100
–300
–1,000
Saturation Voltage vs. Collector Current
Ta = 25
°
C
l
C
= 500 l
B
Pulse
75
°
C
V
BE (sat)
V
CE (sat)
C
V
C
B
V
B
0.01
0.03
0.1
0.3
1.0
3
10
Collector current I
C
(mA)
S
μ
s
–10
–30
–100
–300
–1,000
Switching Time vs. Collector Current
t
off
t
on
t
d
t
stg
I
= 500 I
B
Ta = 25
°
C
V
IN
V
CC
V
IN
V
6 V
I
C
R
L
R
1
R
2
l
B1
l
B2
50
+
–
+
–
D.U.T.
0.002
μ
0.002
μ
50
μ
50
μ
t
, t
10ns
PW 10
μ
s
duty ratio 10%
≤
Switching Time Test Circuit
0
10%
10%
10%
90%
90%
90%
t
stg
Input
–10 V
Output
0
t
d
t
on
t
off
Response Waveform
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