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參數(shù)資料
| 型號： | 2SA1194K |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進(jìn)步黨 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 2SA1194K |
2SA1194(K)
2
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
–60
—
—
V
I
C
= –1 mA, R
BE
=
∞
Collector cutoff current
I
CBO
I
EBO
h
FE
V
CE(sat)
—
—
–1.0
μ
A
μ
A
V
CB
= –60 V, I
E
= 0
V
EB
= –7 V, I
C
= 0
V
CE
= –3 V, I
C
= –500 mA*
1
I
C
= –500 mA, I
B
= –1 mA*
1
Emitter cutoff current
—
—
–1.0
DC current transfer ratio
1000
—
—
Collector to emitter saturation
voltage
—
—
–2.0
V
Base to emitter saturation
voltage
V
BE(sat)
—
—
–2.0
V
Turn on time
t
on
t
off
—
0.7
—
μ
s
μ
s
I
C
= –500 mA
I
B1
= –I
B2
= –1 mA
Turn off time
Note:
—
0.8
—
1. Pulse test
0
50
150
100
Case Temperature T
C
(
°
C)
C
Maximum Collector Dissipation Curve
4
8
12
–0.01
–0.03
–0.1
–0.3
–3
–10
–1.0
Collector to emitter Voltage V
CE
(V)
C
C
–0.1
–1.0
–100
–30
–10
–3
–0.3
Area of Safe Operation
Ta = 25
°
C
DCOpC
(T
C
=25
°
P 1s1h)
PW = 10 ms (1 Shot)
I
C
(max)
i
C
(peak)
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