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參數(shù)資料
| 型號(hào)： | 2N7002K |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S) MOSFET(漏源擊穿電壓60V的N溝道增強(qiáng)型MOSFET) |
| 中文描述： | N通道60 - V（下局副局長(zhǎng)）MOSFET的（漏源擊穿電壓60V的的N溝道增強(qiáng)型MOSFET的） |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大小： | 41K |
| 代理商： | 2N7002K |
2N7002K
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 71333
S-02464
—
Rev. A, 25-Oct-00
0
1
2
3
4
5
0
2
4
6
8
10
On-Resistance vs. Gate-Source Voltage
V
GS
–
Gate-to-Source Voltage (V)
I
D
= 500 mA
I
D
= 200 mA
–
r
)
1.2
1.5
1
100
1000
0.00
0.3
0.6
0.9
T
J
= 25 C
T
J
= 125 C
Source-Drain Diode Forward Voltage
V
SD
–
Source-to-Drain Voltage (V)
–
I
S
10
T
J
=
–
55 C
V
GS
= 0 V
0.01
0
1
2.5
3
100
600
0.1
P
Single Pulse Power, Junction-to-Ambient
Time (sec)
Threshold Voltage Variance Over Temperature
0.4
V
V
–
0.8
–
0.6
–
0.4
–
0.2
–
0.0
0.2
–
50
–
25
0
25
50
75
100
125
150
I
D
= 250 A
T
J
–
Junction Temperature ( C)
1.5
2
0.5
1
10
T
A
= 25 C
10
–
3
10
–
2
1
10
600
10
–
1
10
–
4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
N
T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=350 C/W
3. T
JM
–
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
t
1
t
2
Notes:
P
DM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002K / T1 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR MOSFET 制造商:Vishay Siliconix 功能描述:TRANSISTOR, MOSFET |
| 2N7002K _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| 2N7002K,215 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002K | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 0.34A SOT23 |
| 2N7002K_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
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