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參數(shù)資料
| 型號： | 2N7002K |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S) MOSFET(漏源擊穿電壓60V的N溝道增強型MOSFET) |
| 中文描述： | N通道60 - V（下局副局長）MOSFET的（漏源擊穿電壓60V的的N溝道增強型MOSFET的） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 41K |
| 代理商： | 2N7002K |
2N7002K
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71333
S-02464
—
Rev. A, 25-Oct-00
Limits
Parameter
Symbol
Test Conditions
Min
Typ
b
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 10 A
60
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1
2.5
V
V
DS
= 0 V, V
GS
=
20 V
10
A
V
DS
= 0 V, V
GS
=
10 V
150
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
10 V, T
J
= 85 C
1000
V
DS
= 0 V, V
GS
=
5 V
100
nA
V
DS
= 50 V, V
GS
= 0 V
10
V
DS
= 50 V, V
GS
= 0 V, T
J
= 85 C
100
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
1
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 C
500
A
V
GS
= 10 V, V
DS
= 7.5 V
800
On-State Drain Current
c
I
D(on)
V
GS
= 4.5 V, V
DS
= 10 V
500
mA
V
GS
= 10 V, I
D
= 500 mA
2
Drain-Source On-Resistance
c
r
DS(on)
V
GS
= 4.5 V, I
D
= 200 mA
4
Forward Transconductance
c
g
fs
V
DS
= 10 V, I
D
= 200 mA
100
mS
Diode Forward Voltage
V
SD
I
S
= 200 mA, V
GS
= 0 V
1.3
V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= 10 V, V
= 4.5 V
I
D
250 mA
0.4
0.6
nC
Input Capacitance
C
iss
30
Output Capacitance
C
oss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
6
pF
Reverse Transfer Capacitance
C
rss
2.5
Switching
b, d
Turn-On Time
t
(on)
V
DD
= 30 V, R
L
= 150
I
D
200 mA, V
GEN
= 10V
R
G
= 10
25
Turn-Off Time
t
(off)
35
ns
Notes
a.
b.
c.
d.
T
= 25 C unless otherwise noted.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
TNJO60BE
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002K / T1 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR MOSFET 制造商:Vishay Siliconix 功能描述:TRANSISTOR, MOSFET |
| 2N7002K _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| 2N7002K,215 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002K | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 0.34A SOT23 |
| 2N7002K_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
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