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參數(shù)資料
| 型號(hào)： | 2N7000 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓60V,夾斷電流0.2A的N溝道增強(qiáng)型MOSFET晶體管) |
| 中文描述： | N溝道增強(qiáng)型MOSFET晶體管（最小漏源擊穿電壓60V的，夾斷電流0.2A的N溝道增強(qiáng)型MOSFET的晶體管） |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 86K |
| 代理商： | 2N7000 |
2N7000/7002, VQ1000J/P, BS170
2
Siliconix
S-52429—Rev. E, 28-Apr-97
Absolute Maximum Ratings (T
A
= 25 C Unless Otherwise Noted)
Single
Total
Quad
Parameter
Symbol
2N7000
2N7002
VQ1000J
VQ1000P
VQ1000J/P
BS170
Unit
Drain-Source Voltage
V
DS
V
GSM
V
GS
60
60
60
60
60
Gate-Source Voltage—Non-Repetitive
40
40
30
25
V
Gate-Source Voltage—Continuous
20
20
20
20
20
Continuous Drain Current
(T
J
= 150 C)
T
A
= 25 C
T
A
= 100 C
I
D
0.2
0.115
0.225
0.225
0.5
0.13
0.073
0.14
0.14
0.175
A
Pulsed Drain Current
a
I
DM
0.5
0.8
1
1
Power Dissipation
T
A
= 25 C
T
A
= 100 C
P
D
0.4
0.2
1.3
1.3
2
0.83
W
0.16
0.08
0.52
0.52
0.8
Maximum Junction-to-Ambient
R
thJA
312.5
625
96
96
62.5
156
C/W
Operating Junction and
Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
b.
Pulse width limited by maximum junction temperature.
t
p
50 s.
Specifications
a
for 2N7000 and 2N7002
Limits
2N7000
2N7002
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 10 A
V
DS
= V
GS
, I
D
= 1 mA
70
60
60
Gate Threshold Voltage
Gate-Threshold Voltage
V
GS(th)
2.1
0.8
3
V
V
DS
= V
GS
, I
D
= 0.25 mA
2.0
1
2.5
V
DS
= 0 V, V
GS
=
15 V
10
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
10
0
nA
V
DS
= 48 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
T
C
= 125 C
1000
A
V
DS
= 60 V, V
GS
= 0 V
1
T
C
= 125 C
500
On State Drain Current
On-State Drain Current
c
I
D(on)
V
DS
= 10 V, V
GS
= 4.5 V
V
DS
= 7.5 V, V
GS
= 10 V
V
GS
= 4.5 V, I
D
= 0.075 A
V
GS
= 5 V, I
D
= 0.05 A
0.35
0.075
A
1
0.5
4.5
5.3
3.2
7.5
Drain-Source On-Resistance
c
r
DS(on)
T
C
= 125 C
5.8
13.5
V
GS
= 10 V, I
D
= 0.5 A
2.4
5
7.5
= 125 C
4.4
9
13.5
Forward Transconductance
c
Common Source Output Conductance
c
g
fs
g
os
V
DS
= 10 V, I
D
= 0.2 A
V
DS
= 5 V, I
D
= 0.05 A
100
80
mS
0.5
Dynamic
Input Capacitance
C
iss
C
oss
C
rss
V
DS
= 25 V V
GS
= 0 V
f = 1 MHz
f 1 MHz
22
60
50
Output Capacitance
11
25
25
pF
Reverse Transfer Capacitance
2
5
5
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|---|---|
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| 2N7000,126 | 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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