- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33293 > 2N6796 (FAIRCHILD SEMICONDUCTOR CORP) 8 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF PDF資料下載
參數(shù)資料
| 型號： | 2N6796 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁數(shù)： | 5/7頁 |
| 文件大小： | 84K |
| 代理商： | 2N6796 |
2001 Fairchild Semiconductor Corporation
2N6796 Rev. B
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves Unless Otherwise Specied (Continued)
6
4
2
0
510
ID, DRAIN CURRENT (A)
0
10
8
15
20
25
g
fs
,TRANSCONDUCT
ANCE
(S)
80
s PULSE TEST
TJ = 125
oC
TJ = -55
oC
TJ = 25
oC
30
35
0
2
10
5
2
1
VSD, SOURCE TO DRAIN VOLTAGE (V)
I SD
,SOURCE
T
O
DRAIN
CURRENT
(A)
TJ = 150
oC
TJ = 25
oC
5
0.5
1.0
1.5
2.0
2.5
3.0
15
10
5
0
8
16
24
32
VDS = 20V
VDS = 50V
VDS = 80V
Qg, TOTAL GATE CHARGE (nC)
V
GS
,GA
TE
T
O
SOURCE
(V)
20
0
ID = 18A
2N6796
相關PDF資料 |
PDF描述 |
|---|---|
| 2N6798 | 5.5 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6800LCC4 | 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2N6800TXV | 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6800TX | 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6800TXV | 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6796 | 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-39 |
| 2N6796_03 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:TMOS FET ENHANCEMENT N - CHANNEL |
| 2N6796_10 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL MOSFET |
| 2N6796JANTX | 制造商:International Rectifier 功能描述: 制造商:Microsemi Corporation 功能描述: |
| 2N6796JANTXV | 制造商:International Rectifier 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。