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參數(shù)資料
| 型號： | 2N6796 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 84K |
| 代理商： | 2N6796 |
2001 Fairchild Semiconductor Corporation
2N6796 Rev. B
2N6796
8A, 100V, 0.180 Ohm, N-Channel Power
MOSFET
The 2N6796 is an N-Channel enhancement mode silicon
gate power eld effect transistor designed for applications
such as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high power bipolar
switching transistors requiring high speed and low gate drive
power. This type can be operated directly from integrated
circuits.
Features
8A, 100V
rDS(ON) = 0.180
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-205AF
Ordering Information
PART NUMBER
PACKAGE
BRAND
2N6796
TO-205AF
2N6796
NOTE: When ordering, use the entire part number.
G
D
S
SOURCE
DRAIN
(CASE)
GATE
Data Sheet
December 2001
相關PDF資料 |
PDF描述 |
|---|---|
| 2N6798 | 5.5 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6800LCC4 | 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2N6800TXV | 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6800TX | 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6800TXV | 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6796 | 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-39 |
| 2N6796_03 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:TMOS FET ENHANCEMENT N - CHANNEL |
| 2N6796_10 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL MOSFET |
| 2N6796JANTX | 制造商:International Rectifier 功能描述: 制造商:Microsemi Corporation 功能描述: |
| 2N6796JANTXV | 制造商:International Rectifier 功能描述: |
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