參數(shù)資料
型號(hào): 2N6782
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁數(shù): 4/7頁
文件大小: 91K
代理商: 2N6782
2001 Fairchild Semiconductor Corporation
2N6782 Rev. B
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves Unless Otherwise Specied (Continued)
6
4
2
0
12
I D
,DRAIN
CURRENT
(A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
0
10
8
34
5
80
s PULSE TEST
67
4.0V
5.0V
VGS = 10V
6.0V
7.0V
9.0V
8.0V
0
2
10
14
VGS, SOURCE TO DRAIN VOLTAGE (V)
10
1.0
0.1
I D
,DRAIN
CURRENT
(A)
468
12
TJ = 125
oC
TJ = 25
oC
TJ = -55
oC
80
s PULSE TEST
ID, DRAIN CURRENT (A)
r DS(ON)
,ON-ST
A
TE
RESIST
ANCE
(
)
2.0
1.5
1.0
0.5
0
5
10
15
20
VGS = 20V
VGS = 10V
1.75
1.00
0.75
0.50
0.25
-80
-40
0
40
TJ, JUNCTION TEMPERATURE (
oC)
80
120
160
1.25
1.50
NORMALIZED
ON-RESIST
ANCE
2.00
VGS = 10V
ID = 1.5A
1.10
0.95
0.90
0.85
0.80
-80
-40
0
40
TJ, JUNCTION TEMPERATURE (
oC)
80
120
160
1.00
1.05
NORMALIZED
ON-RESIST
ANCE
1.15
500
100
0
20
50
C,
CAP
A
CIT
ANCE
(pF)
300
VDS, DRAIN TO SOURCE VOLTAGE (V)
400
200
CISS
COSS
CRSS
10
30
40
CISS = CGS + CGD
CRSS = CGD
COSS = CDS + CGD
VGS = 0V, f = 1MHz
2N6782
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N6782 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-39
2N6782_01 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N–CHANNEL POWER MOSFET ENHANCEMENT MODE
2N6782_11 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL MOSFET
2N6782_12 制造商:MAS 制造商全稱:MAS 功能描述:This family of 2N6782, 2N6784 and 2N6786 switching transistors are military qualified up to the JANTXV level for high-reliability applications.
2N6782JANTX 制造商:International Rectifier 功能描述: 制造商:Microsemi Corporation 功能描述: