參數(shù)資料
型號(hào): 2N6782
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 91K
代理商: 2N6782
2001 Fairchild Semiconductor Corporation
2N6782 Rev. B
Typical Performance Curves Unless Otherwise Specied
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
TC, CASE TEMPERATURE (
oC)
PO
WER
DISSIP
A
TION
MUL
TIPLIER
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
50
100
I D
,DRAIN
CURRENT
(A)
TC, CASE TEMPERATURE (
oC)
150
25
75
125
5
4
3
2
1
t, RECTANGULAR PULSE DURATION (s)
Z
θ
JC
,NORMALIZED
THERMAL
IMPED
ANCE
10-3
10-2
1
10-5
10-4
0.01
0.1
10
10-1
1
PDM
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
t1
t2
0.1
0.02
0.2
0.5
0.01
0.05
SINGLE PULSE
VDS, DRAIN TO SOURCE VOLTAGE (V)
10
I D
,DRAIN
CURRENT
(A)
100
1
10
-1
-0.1
1000
10
s
100
s
1ms
10ms
100ms
DC
SINGLE PULSE
TJ = MAX RATED
TC = 25
oC
RθJC = 8.33
oC/W
OPERATION IN THIS AREA IS
LIMITED BY rDS(ON)
12
10
8
6
4
2
0
102030405060
VDS, DRAIN TO SOURCE VOLTAGE (V)
I D
,DRAIN
CURRENT
(A)
VGS = 8V
80
s PULSE TEST
10V
9V
7V
6V
5V
4V
2N6782
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N6782 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-39
2N6782_01 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N–CHANNEL POWER MOSFET ENHANCEMENT MODE
2N6782_11 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL MOSFET
2N6782_12 制造商:MAS 制造商全稱:MAS 功能描述:This family of 2N6782, 2N6784 and 2N6786 switching transistors are military qualified up to the JANTXV level for high-reliability applications.
2N6782JANTX 制造商:International Rectifier 功能描述: 制造商:Microsemi Corporation 功能描述: