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參數(shù)資料
| 型號： | 2N6661 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓90V,夾斷電流0.9A的N溝道增強型MOSFET晶體管) |
| 中文描述： | N溝道增強型MOSFET晶體管（最小漏源擊穿電壓90V的，夾斷電流到0.9A的N溝道增強型MOSFET的晶體管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 72K |
| 代理商： | 2N6661 |
2N6661/VN88AFD
Siliconix
P-37655—Rev. B, 25-Jul-94
1
N-Channel Enhancement-Mode MOSFET Transistors
Product Summary
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
2N6661
90
4 @ V
GS
= 10 V
0.8 to 2
0.9
VN88AFD
80
4 @ V
GS
= 10 V
0.8 to 2.5
1.29
Features
Benefits
Applications
Low On-Resistance: 3.6
Low Threshold: 1.6 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 6 ns
Low Input and Output Leakage
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
1
2
3
TO-205AD
(TO-39)
Top View
D
G
S
TO-220SD
(Tab-Drain)
Front View
S G D
D
G
S
N-Channel MOSFET
2N6661
VN88AFD
Absolute Maximum Ratings (T
C
= 25 C Unless Otherwise Noted)
Parameter
Symbol
2N6661
VN88AFD
Unit
Drain-Source Voltage
V
DS
90
80
V
Gate-Source Voltage
V
GS
20
30
Continuous Drain Current (T
J
= 150 C)
T
C
= 25 C
I
D
0.9
1.29
T
C
= 100 C
0.7
0.81
A
Pulsed Drain Current
a
I
DM
3
3
Power Dissipation
T
C
= 25 C
P
D
6.25
15
W
T
C
= 100 C
2.5
6
Maximum Junction-to-Ambient
b
R
thJA
170
C/W
Maximum Junction-to-Case
R
thJC
8.3
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
b.
Pulse width limited by maximum junction temperature.
This parameter not registered with JEDEC.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70224.
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| 2N6727 | COMPLEMENTARY SILICON POWER TRANSISTOR |
| 2N6715 | COMPLEMENTARY SILICON POWER TRANSISTOR |
| 2N6726 | PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
| 2N6727 | PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6661_10 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 2N6661_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 90 V (D-S) MOSFET |
| 2N6661-2 | 功能描述:MOSFET 90V 0.86A 6.25W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N6661CSM4 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| 2N6661DCSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:DUAL N–CHANNEL ENHANCEMENT MODE |
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