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參數(shù)資料
| 型號： | 2N5630 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 16 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 253K |
| 代理商： | 2N5630 |
2N5630 2N5631 2N6030 2N6031
6
Motorola Bipolar Power Transistor Device Data
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2N5630/D
*2N5630/D*
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6030 | 16 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N5631 | 16 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N5633.MOD | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N5634LEADFREE | 10 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N5633LEADFREE | 10 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5631 | 功能描述:兩極晶體管 - BJT 16A 140V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5631/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High-Voltage High-Power Transistors |
| 2N5631G | 功能描述:兩極晶體管 - BJT 16A 140V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5632 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 100V 10A 3PIN TO-3 - Bulk 制造商:Motorola Inc 功能描述: 制造商:Harris Corporation 功能描述: |
| 2N5633 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 120V 10A 3PIN TO-3 - Bulk |
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