參數(shù)資料
型號(hào)： 2N5630
廠商： MOTOROLA INC
元件分類(lèi)： 功率晶體管
英文描述： 16 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 253K
代理商： 2N5630
2N5630 2N5631 2N6030 2N6031
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
2N5630, 2N6030
2N5631, 2N6031
VCEO(sus)
120
140
—
Vdc
Collector–Emitter Cutoff Current
(VCE = 50 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
2N5630, 2N6030
(VCE = 70 Vdc, IB = 0)
2N5631, 2N6031
ICEO
—
2.0
mAdc
Collector–Emitter Cutoff Current
(VCE = Rated VCB, VEB(off) = 1.5 Vdc)
(VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150_C)
ICEX
—
2.0
7.0
mAdc
Collector–Base Cutoff Current
(VCB = Rated VCB, IE = 0)
ICBO
—
2.0
mAdc
Emitter–Base Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
IEBO
—
5.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 8.0 Adc, VCE = 2.0 Vdc)
2N5630, 2N6030
2N5631, 2N6031
(IC = 16 Adc, VCE = 2.0 Vdc)
All Types
hFE
20
15
4.0
80
60
—
—
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 1.0 Adc)
All Types
(IC = 16 Adc, IB = 4.0 Adc)
VCE(sat)
—
1.0
2.0
Vdc
Base–Emitter Saturation Voltage
(IC = 10 Adc, IB = 1.0 Adc)
VBE(sat)
—
1.8
Vdc
Base–Emitter On Voltage
(IC = 8.0 Adc, VCE = 2.0 Vdc)
VBE(on)
—
1.5
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
(IC = 1.0 Adc, VCE = 20 Vdc, ftest = 0.5 MHz)
fT
1.0
—
MHz
Output Capacitance
2N5630, 31
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N6030, 31
Cob
—
500
1000
pF
Small–Signal Current Gain
(IC = 4.0 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
15
—
—
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
v300 s, Duty Cycle w 2.0%.
(2) fT = |hfe| ftest
Figure 2. Switching Times Test Circuit
+11 V
25
s
0
– 9.0 V
RB
– 4 V
D1
SCOPE
VCC
+ 30 V
RC
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
3.0
0.2
Figure 3. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
t,
TIME
(
s)
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.03
0.3
0.5 0.7 1.0
2.0
3.0
7.0
20
TJ = 25°C
IC/IB = 10
VCE = 30 V
0.07
0.05
5.0
10
tr
td @ VBE(off) = 5.0 V
51
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
For PNP test circuit, reverse all polarities and D1.
2N5629, 30, 31
2N6029, 30, 31
相關(guān)PDF資料
PDF描述
2N6030 16 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-204AA
2N5631 16 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA
2N5633.MOD 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA
2N5634LEADFREE 10 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3
2N5633LEADFREE 10 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-3
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N5631 功能描述:兩極晶體管 - BJT 16A 140V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N5631/D 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:High-Voltage High-Power Transistors
2N5631G 功能描述:兩極晶體管 - BJT 16A 140V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N5632 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 100V 10A 3PIN TO-3 - Bulk 制造商:Motorola Inc 功能描述: 制造商:Harris Corporation 功能描述:
2N5633 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 120V 10A 3PIN TO-3 - Bulk
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