參數(shù)資料
型號: 2N5116
廠商: Vishay Intertechnology,Inc.
英文描述: P-Channel JFET(最大導(dǎo)通電阻150Ω,夾斷電流-10pA的P溝道結(jié)型場效應(yīng)管)
中文描述: P溝道場效應(yīng)(最大導(dǎo)通電阻150Ω,夾斷電流,10pA的P溝道結(jié)型場效應(yīng)管)
文件頁數(shù): 2/5頁
文件大?。?/td> 71K
代理商: 2N5116
2N5114/5115/5116
2
Siliconix
P-37410—Rev. D, 04-Jul-94
Specifications
a
Limits
2N5114
2N5115
2N5116
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= 1 A , V
DS
= 0 V
45
30
30
30
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= –15 V, I
D
= –1 nA
5
10
3
6
1
4
Saturation Drain Current
c
I
DSS
V
GS
= 0 V
V
DS
= –18 V
V
DS
= –15 V
–30
–90
mA
–15
–60
–5
–25
Gate Reverse Current
I
GSS
V
GS
= 20 V, V
DS
= 0 V
5
500
500
500
pA
T
A
= 150 C
0.01
1
1
1
A
Gate Operating Current
d
I
G
V
DG
= –15 V, I
D
= –1 mA
–5
V
GS
= 12 V
V
GS
= 7 V
V
GS
= 5 V
V
GS
= 12 V
V
GS
= 7 V
V
GS
= 5 V
I
D
= –15 mA
I
D
= –7 mA
I
D
= –3 mA
–10
–500
pA
V
DS
= –15 V
–10
–500
Drain Cutoff Current
D( ff)
I
D(off)
–10
–500
V
DS
= –15 V
A
= 150 C
T
150 C
–0.02
–1
–0.02
–1
A
–0.02
–1
–1.0
–1.3
Drain-Source On-Voltage
V
DS(on)
V
GS
= 0 V
–0.7
–0.8
V
–0.5
–0.6
Drain-Source
On-Resistance
r
DS(on)
V
GS
= 0 V, I
D
= –1 mA
75
100
150
Gate-Source
Forward Voltage
V
GS(F)
I
G
= –1 mA , V
DS
= 0 V
–0.7
–1
–1
–1
V
Dynamic
Common-Source
Forward Transconductance
d
g
fs
V
DS
= –15 V, I
D
= –1 mA
f = 1 kHz
4.5
mS
Common-Source
Output Conductance
d
g
os
20
S
Drain-Source
On-Resistance
r
ds(on)
V
GS
= 0 V, I
D
= 0 mA , f = 1 kHz
75
100
150
Common-Source
Input Capacitance
C
iss
V
DS
= –15 V, V
GS
= 0 V
f = 1 MHz
20
25
25
25
Common-Source
Common Source
Reverse Transfer
Capacitance
V
DS
= 0 V
f = 1 MHz
f 1 MHz
V
GS
= 12 V
V
GS
= 7 V
V
GS
= 5 V
5
7
pF
C
rss
6
7
6
7
Equivalent Input
Noise Voltage
d
e
n
V
DS
= 10 V, I
D
= 10 mA
f = 1 kHz
20
nV
Hz
Switching
Turn On Time
Turn-On Time
t
d(on)
t
r
t
d(off)
t
f
6
10
12
See Switching Circuit
10
20
30
ns
Turn Off Time
Turn-Off Time
6
8
10
15
30
50
Notes
a.
b.
c.
d.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s duty cycle
3%.
This parameter not registered with JEDEC.
PSCIA
相關(guān)PDF資料
PDF描述
2N5114 P-Channel JFET(最大導(dǎo)通電阻75Ω,夾斷電流-10pA的P溝道結(jié)型場效應(yīng)管)
2N5115 P-Channel JFET(最大導(dǎo)通電阻100Ω,夾斷電流-10pA的P溝道結(jié)型場效應(yīng)管)
2N5133 TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 50MA I(C) | TO-106
2N5128 TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 500MA I(C) | TO-105
2N5135 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 800MA I(C) | TO-105
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N5116_TO-18 制造商:MICROSS 制造商全稱:MICROSS 功能描述:P-CHANNEL JFET
2N5116-E3 功能描述:JFET 30V 10pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時(shí)的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
2N5116JAN 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel JFETs
2N5116JAN02 制造商:Vishay Angstrohm 功能描述:Trans JFET P-CH 3-Pin TO-206AA 制造商:Vishay Siliconix 功能描述:TRANS JFET P-CH 3PIN TO-206AA - Bulk
2N5116JANTX 制造商:Vishay Siliconix 功能描述:P CHANNEL JFET, 30V, TO-206AA; Transistor Type:JFET; Breakdown Voltage Vbr:30V; Zero Gate Voltage Drain Current Idss Min:-5mA; Zero Gate Voltage Drain Current Idss Max:-25mA; Gate-Source Cutoff Voltage Vgs(off) Max:4V; No. of Pins:3 ;RoHS Compliant: No