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參數(shù)資料
| 型號： | 2N4427 |
| 廠商： | 意法半導體 |
| 英文描述： | VHF OSCILLATOR POWER AMPLIFIER |
| 中文描述： | 甚高頻振蕩器功率放大 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 45K |
| 代理商： | 2N4427 |
1995 Oct 27
3
Philips Semiconductors
Product specification
Silicon planar epitaxial
overlay transistors
2N3866; 2N4427
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
2N3866
2N4427
collector-emitter voltage
2N3866
2N4427
collector-emitter voltage
2N3866
2N4427
emitter-base voltage
2N3866
2N4427
collector current (DC)
average collector current
open emitter
55
40
V
V
V
CER
R
BE
= 10
55
40
V
V
V
CEO
open base
30
20
V
V
V
EBO
open collector
3.5
2.0
0.4
0.4
V
V
A
A
I
C
I
C(AV)
measured over any 20 ms
period
I
CM
P
tot
T
stg
T
j
collector current peak value
total power dissipation
storage temperature
junction temperature
65
0.4
3.5
+200
200
A
W
°
C
°
C
up to T
mb
= 25
°
C
THERMAL CHARACTERISTICS
Notes
1.
2.
Mounted with top clamping washer 56218.
Mounted with top clamping washer 56218 and a boron nitride washer for electrical insulation.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction
to ambient in free air
thermal resistance from junction
to mounting base
thermal resistance from
mounting base to heatsink
200
K/W
R
th j-mb
50
K/W
R
th mb-h
note 1
note 2
1.0
2.5
K/W
K/W
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