參數(shù)資料
型號: 2N4427
廠商: 意法半導(dǎo)體
英文描述: VHF OSCILLATOR POWER AMPLIFIER
中文描述: 甚高頻振蕩器功率放大
文件頁數(shù): 2/9頁
文件大?。?/td> 45K
代理商: 2N4427
1995 Oct 27
2
Philips Semiconductors
Product specification
Silicon planar epitaxial
overlay transistors
2N3866; 2N4427
DESCRIPTION
NPN overlay transistors in TO-39 metal packages with the
collector connected to the case. The devices are primarily
intended for class-A, B or C amplifiers, frequency multiplier
and oscillator circuits.
APPLICATIONS
The transistors are intended for use in output, driver or
pre-driver stages in VHF and UHF equipment.
PINNING - TO-39/1
PIN
DESCRIPTION
1
2
3
emitter
base
collector
Fig.1 Simplified outline.
handbook, halfpage
MBB199
1
2
3
QUICK REFERENCE DATA
RF performance
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CER
collector-emitter voltage
2N3866
2N4427
collector-emitter voltage
2N3866
2N4427
emitter-base voltage
2N3866
2N4427
collector current (DC)
average collector current
R
BE
= 10
55
40
V
V
V
CEO
open base
30
20
V
V
V
EBO
open collector
3.5
2.0
0.4
0.4
V
V
A
A
I
C
I
C(AV)
measured over any 20 ms
period
up to T
mb
= 25
°
C
I
C
= 50 mA; V
CE
= 15 V;
f = 200 MHz
P
tot
f
T
total power dissipation
transition frequency
500
3.5
W
MHz
T
j
junction temperature
200
°
C
TYPE NUMBER
f
(MHz)
V
CE
(V)
P
o
(W)
G
p
(dB)
η
(%)
2N3866
2N4427
400
175
28
12
1
1
>10
>10
>45
>50
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