- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369023 > 2N4392CSM Small Signal N-Channal J-FET In a Hermetically Sealed Cermic Surface Mount Package For High Reliability Application(小信號N溝道結(jié)型場效應(yīng)管（氣密封口陶瓷表貼封裝，高可靠性應(yīng)用）) PDF資料下載
參數(shù)資料
| 型號： | 2N4392CSM |
| 英文描述： | Small Signal N-Channal J-FET In a Hermetically Sealed Cermic Surface Mount Package For High Reliability Application(小信號N溝道結(jié)型場效應(yīng)管（氣密封口陶瓷表貼封裝，高可靠性應(yīng)用）) |
| 中文描述： | 小信號n -路通道的J -在密封的六窯業(yè)表面貼裝封裝，高可靠性的應(yīng)用場效應(yīng)管（小信號?溝道結(jié)型場效應(yīng)管（氣密封口陶瓷表貼封裝，高可靠性應(yīng)用）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 19K |
| 代理商： | 2N4392CSM |
V
nA
mA
V
pF
ns
40
–2
–5
1
0.1
0.1
75
0.4
60
25
14
3.5
60
5
20
15
35
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 7/94
2N4392CSM
LAB
SEME
Parameter
Gate – Source Breakdown Voltage
Gate – Source Voltage
Gate – Source Forward Voltage
Gate Reverse Current
Drain Cut–off Current
Zero Gate Voltage Drain Current
Drain – Source On Voltage
Drain – Source On Resistance
Test Conditions
V
DS
= 0
V
DS
= 20V
V
DS
= 0
V
DS
= 0
V
DS
= 20V
V
DS
= 20V
V
GS
= 0
V
GS
= 0
V
DS
= 20V
f = 1MHz
V
DS
= 0
f = 1MHz
V
GS
= 0
I
D(on)
= 6mA
V
GS(off)
= 7V
I
D(on)
= 6mA
V
GS(off)
= 7V
Min.
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS
(Tamb= 25°C unless otherwise stated)
I
G
= 1
μ
A
I
D
= 1nA
I
G
= 1mA
V
GS
= 20V
V
GS
= –7V
V
GS
= 0
I
D
= 6mA
I
D
= 1mA
V
GS
= 0
V
GS
= –7V
I
D
= 1mA
V
(BR)GSS
V
GS
V
GS(f)
I
GSS
I
D(off)
I
DSS*
V
DS(on)
R
DS(on)
C
ISS
Input Capacitance
C
RSS
Reverse Transfer Capacitance#
R
DS(on)
t
r
t
f
t
on
t
off
Static Drain – Source On Resistance
Rise Time
Fall Time
Turn-On Time
Turn-Off Time
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N4400 | NPN PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N4400 | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| 2N4402 | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| 2N4402 | NPN PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N4400 | Small Signal Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4392CSM_03 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SMALL SIGNAL N–CHANNEL J–FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
| 2N4392DWF | 制造商:Vishay Siliconix 功能描述:WAFER SORTED TO 2N4392 ELECTRICAL - Bulk |
| 2N4392-E3 | 功能描述:JFET 55V 5pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N4392-E3 | 制造商:Vishay Siliconix 功能描述:TRANSISTORS - JFET |
| 2N4392UB | 功能描述:N CHANNEL JFET 制造商:microsemi ire division 系列:* 零件狀態(tài):在售 標(biāo)準(zhǔn)包裝:1 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。