參數(shù)資料
型號(hào): 2N4402
英文描述: NPN SILICON PLANAR EPITAXIAL TRANSISTOR
中文描述: NPN硅外延平面晶體管
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 153K
代理商: 2N4402
Continental Device India Limited
Data Sheet
Page 1 of 6
2N4400, 2N4401
2N4402, 2N4403
ABSOLUTE MAXIMM RATINGS
Rating
Symbol
2N4400/ 01
2N4402/ 03
Units
Collector-Emitter Voltage
V
CEO
V
CBO
V
EBO
I
C
P
D
40
40
V
Collector-Base Voltage
60
40
V
Emitter-Base Voltage
6
5
V
Collector Current Continuous
-
600
-
mA
Power Dissipation At Ta=25 oC
-
625
-
mW
Derate Above 25 oC
-
5.0
-
mW/ oC
Power Dissipation At Tc=25 oC
P
D
-
1.5
-
W
Derate Above 25 oC
-
12
-
mW/ oC
Operating & Storage
T
j
,T
stg
-55 to +150
oC
Junction Temperature Range
THERMAL RESISTANCE
Junction to Case
R
th (j-c)
R
th (j-a)
-
83.3
-
oC/ W
Junction to Ambient
ELECTRICAL CHARACTERISTICS
(Ta =25 oC unless otherwise specified)
-
200
-
oC/ W
2N4400, 4401 NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N4402, 4403 PNP SILICON PLANAR EPITAXIAL TRANSISTORS
General Purpose Switching Applications
1 = EMITTER
2 = BASE
3 = COLLECTOR
DIM
A
B
C
D
E
F
G
H
K
L
MIN
4,32
4,45
3,18
0,41
0,35
MAX
5,33
5,20
4,19
0,55
0,50
5 DEG
1,14
1,14
12,70
1.982
1,40
1,53
2.082
ALL DIMENSIONS IN M.M.
E
B
C
1 2 3
TO-92 Plastic Package
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
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PDF描述
2N4402 NPN PNP SILICON PLANAR EPITAXIAL TRANSISTORS
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2N4402_D74Z 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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