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參數(shù)資料
| 型號： | 2N4118A |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET(最小柵源擊穿電壓-40V，最小飽和漏極電流80μA的N溝道結(jié)型場效應(yīng)管) |
| 中文描述： | N溝道場效應(yīng)（最小柵源擊穿電壓- 40V的，最小飽和漏極電流80μA的N溝道結(jié)型場效應(yīng)管） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 62K |
| 代理商： | 2N4118A |
2N/PN/SST4117A Series
Siliconix
S-52424—Rev. E, 14-Apr-97
3
Typical Characteristics
Gate Leakage Current
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Common-Source Forward Transconductance
vs. Drain Current
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Output Characteristics
1000
0
–5
–4
–3
–2
–1
800
0
0
6
30
g
fs
I
DSS
T
A
= 125 C
T
A
= 25 C
100 A
I
GSS
@ 25 C
100 A
Output Characteristics
500
400
300
100
0
–0.5 V
–1.0 V
–2.0 V
–1.5 V
V
GS
= 0 V
15
0
–3
–5
–4
–2
–1
12
9
6
3
0
0.01
0.1
1
200
160
120
40
0
5
4
3
2
1
0
r
DS
@ I
D
= 10 A, V
GS
= 0 V
g
os
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
r
DS
g
os
T
A
= –55_C
125 C
V
DS
= 10 V
f = 1 kHz
100
0
16
8
4
20
80
60
20
0
V
GS
= 0 V
–0.5 V
–0.4 V
–0.3 V
–0.2 V
–0.1 V
–
I
G
V
GS(off)
– Gate-Source Cutoff Voltage (V)
V
DS
– Drain-Source Voltage (V)
V
DG
– Drain-Gate Voltage (V)
I
D
– Drain Current (mA)
V
GS(off)
– Gate-Source Cutoff Voltage (V)
V
DS
– Drain-Source Voltage (V)
600
400
200
12
18
24
80
25 C
V
GS(off)
= –0.7 V
V
GS(off)
= –2.5 V
200
40
12
0
16
8
4
20
12
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
g
fs
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
300
240
180
120
60
0
10 A
0.1 pA
1 pA
10 pA
100 pA
1 nA
I
GSS
@ 125 C
V
GS(off)
= 2.5 V
10 A
–
I
D
A
r
D
–
)
–
I
D
A
–
I
D
A
S
g
f
S
g
–
S
g
f
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| 2N4118A_TO-71 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:an Ultra-High Input Impedance N-Channel JFET |
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| 2N4119 | 制造商:Vishay Siliconix 功能描述: |
| 2N4119_TO-71 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:an Ultra-High Input Impedance N-Channel JFET |
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