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參數(shù)資料
| 型號： | 2N4117A |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET(最小柵源擊穿電壓-40V，最小飽和漏極電流30μA的N溝道結(jié)型場效應(yīng)管) |
| 中文描述： | N溝道場效應(yīng)（最小柵源擊穿電壓- 40V的，最小飽和漏極電流僅為30uA的N溝道結(jié)型場效應(yīng)管） |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 62K |
| 代理商： | 2N4117A |
2N/PN/SST4117A Series
4
Siliconix
S-52424—Rev. E, 14-Apr-97
Typical Characteristics (Cont’d)
300
240
180
60
0
Transconductance vs. Gate-Source Voltage
Transfer Characteristics
Transconductance vs. Gate-Source Voltage
Transfer Characteristics
Common-Source Input Capacitance
vs. Gate-Source Voltage
Circuit Voltage Gain vs. Drain Current
500
0
–4
–5
–2
–1
0
T
A
= –55 C
125 C
100
0
–0.4
–0.2
–0.8
–1.0
80
60
20
0
200
160
120
40
0
T
A
= 125 C
–55 C
T
A
= –55 C
125 C
V
DS
= 10 V
V
DS
= 10 V
f = 1 kHz
V
DS
= 10 V
V
DS
= 10 V
f = 1 kHz
T
A
= –55 C
125 C
0.1
1
0.01
100
0
V
GS(off)
= –0.7 V
–2.5 V
R
L
10 V
I
D
Assume V
DD
= 15 V, V
DS
= 5 V
2.0
0
f = 1 MHz
V
DS
= 0 V
10 V
V
GS
– Gate-Source Voltage (V)
I
D
– Drain Current (mA)
V
GS
– Gate-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
A
V
–
–
C
i
V
GS(off)
= –0.7 V
V
GS(off)
= –0.7 V
V
GS(off)
= –2.5 V
V
GS(off)
= –2.5 V
40
80
60
20
40
80
25 C
25 C
–0.6
0
–0.4
–0.2
–0.8
–1.0
–0.6
–3
0
–4
–5
–2
–1
–3
0
–16
–20
–8
–4
–12
120
400
300
100
200
1.6
1.2
0.4
0.8
A
V
g
fs
R
L
R
L
g
os
1
25 C
25 C
–
I
D
A
–
I
D
A
S
g
f
S
g
f
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4117A | 制造商:Vishay Siliconix 功能描述:TRANSISTOR JFET N TO-72 |
| 2N4117A_TO-71 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:an Ultra-High Input Impedance N-Channel JFET |
| 2N4117A-2 | 制造商:Vishay Siliconix 功能描述:TRANS JFET N-CH 3PIN TO-72 - Bulk |
| 2N4117A-E3 | 功能描述:JFET 40V 0.03mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N4117A-E3 | 制造商:Vishay Siliconix 功能描述:N CHANNEL JFET, -70V, TO-206AF |
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