- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369021 > 2N4117A (Vishay Intertechnology,Inc.) N-Channel JFET(最小柵源擊穿電壓-40V，最小飽和漏極電流30μA的N溝道結(jié)型場(chǎng)效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號(hào)： | 2N4117A |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET(最小柵源擊穿電壓-40V，最小飽和漏極電流30μA的N溝道結(jié)型場(chǎng)效應(yīng)管) |
| 中文描述： | N溝道場(chǎng)效應(yīng)（最小柵源擊穿電壓- 40V的，最小飽和漏極電流僅為30uA的N溝道結(jié)型場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 62K |
| 代理商： | 2N4117A |
2N/PN/SST4117A Series
2
Siliconix
S-52424—Rev. E, 14-Apr-97
Absolute Maximum Ratings
Gate-Source/Gate-Drain Voltage
–40V
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Gate Current
50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature :
(2N Prefix)
(PN, SST Prefix)
–65 to 175 C
–55 to 150 C
. . . . . . . . . . . . . .
. . . . . . . . .
Operating Junction Temperature :
(2N Prefix)
(PN, SST Prefix)
–55 to 175 C
–55 to 150 C
. . . . . . . . . . . . . .
. . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 sec.)
Power Dissipation (case 25 C) :
300 C
. . . . . . . . . . . . . . .
(2N Prefix)
a
(PN, SST Prefix)
b
300 mW
350 mW
. . . . . . . . . . . . . . . . .
. . . . . . . . . . . .
Notes
a.
b.
Derate 2 mW/ C above 25 C
Derate 2.8 mW/ C above 25 C
Specifications
a
Limits
4117
4118
4119
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= –1 A , V
DS
= 0 V
–70
–40
–40
–40
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 nA
–0.6
–1.8
–1
–3
–2
–6
Saturation Drain Current
I
DSS
V
DS
= 10 V, V
GS
= 0 V
30
90
80
240
200
600
A
V
GS
= –20 V
V
DS
= 0 V
V
GS
= –20 V
V
DS
= 0 V
T
A
= 150 C
–0.2
–1
–1
–1
pA
G t R
Gate Reverse Current
I
GSS
2N
–0.4
–2.5
–2.5
–2.5
nA
V
= –10 V
GS
V
DS
= 0 V
PN
–0.2
–1
–1
–1
pA
SST
–0.2
–10
–10
–10
V
GS
= –10 V
V
DS
= 0 V
T
A
= 100 C
V
DG
= 15 V, I
D
= 30 A
V
DS
= 10 V, V
GS
= –8 V
I
G
= 1 mA , V
DS
= 0 V
PN/SST
–0.03
–2.5
–2.5
–2.5
nA
Gate Operating Current
c
Drain Cutoff Current
c
Gate-Source Forward Voltage
c
I
G
–0.2
pA
I
D(off)
V
GS(F)
0.2
0.7
V
Dynamic
Common-Source
Forward Transconductance
g
fs
V
DS
= 10 V, V
= 0 V
f = 1 kHz
70
210
80
250
100
330
S
Common-Source
Output Conductance
g
os
GS
3
5
10
Common-Source
Input Capacitance
C
iss
2N/PN
1.2
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
SST
1.2
pF
Common-Source
Reverse Transfer Capacitance
C
rss
2N/PN
0.3
1.5
1.5
1.5
SST
0.3
Equivalent Input Noise Voltage
c
e
n
V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
15
nV
√
Hz
Notes
a.
b.
c.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
This parameter not registered with JEDEC.
NT
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N4123 | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| 2N4123 | Small Signal Transistors |
| 2N4123 | NPN EPITAXIAL SILICON TRANSISTOR |
| 2N4123 | NPN Silicon General Purpose Transistor 625mW |
| 2N4124 | NPN SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4117A | 制造商:Vishay Siliconix 功能描述:TRANSISTOR JFET N TO-72 |
| 2N4117A_TO-71 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:an Ultra-High Input Impedance N-Channel JFET |
| 2N4117A-2 | 制造商:Vishay Siliconix 功能描述:TRANS JFET N-CH 3PIN TO-72 - Bulk |
| 2N4117A-E3 | 功能描述:JFET 40V 0.03mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N4117A-E3 | 制造商:Vishay Siliconix 功能描述:N CHANNEL JFET, -70V, TO-206AF |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。