參數(shù)資料
型號(hào): 2MBI200NB-120-01F
廠商: FUJI ELECTRIC CO LTD
元件分類: IGBT 晶體管
英文描述: 200 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-7
文件頁數(shù): 3/4頁
文件大?。?/td> 198K
代理商: 2MBI200NB-120-01F
2MBI200NB-120-01
IGBT Module
Switching time vs. RG
Vcc=600V, Ic=200A, VGE=±15V, Tj=25°C
Dynamic input characteristics
Tj=25°C
Gate resistance : RG [ohm]
10
Gate charge : Qg [nC]
0
500
1000
1500
2000
2500
100
1000
800
600
400
200
0
Switching
time
:
ton,
tr
,toff
,tf
[n
sec.]
Collector-Emitter
v
o
ltage
:
VCE
[V]
F
orward
current
:
IF
[A]
500
400
300
200
100
0
1
2
3
4
5
Gate-Emitter
v
oltage
:
V
GE
[V]
0
5
10
15
20
25
Forward voltage : VF [V]
Re
v
erse
reco
v
e
ry
current
:
Irr
[A]
Re
v
erse
reco
v
e
ry
time
:
trr
[n
sec.]
Forward current vs. Forward voltage
VGE=0V
Reverse recovery characteristics
trr, Irr, vs. IF
Forward current : IF [A]
100
Ther
mal
resistance
:
Rth
(j-c)
[°C/W]
Transient thermal resistance
0.01
0.1
0.001
0.01
0.1
1
Pulse width : PW [sec.]
Reversed biased safe operating area
+VGE=15V, -VGE = 15V, Tj = 125°C, RG = 4.7ohm
0
100
200
300
400
<
<>
2000
1600
1200
400
0
200
400
600
800
1000
1200
Collector-Emitter voltage : VCE [V]
Collector
current
:
Ic
[A]
0.001
800
”p^@í
Discontinued
product.
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