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參數(shù)資料
| 型號： | 2MBI1200U4G-170 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 1600 A, 1700 V, N-CHANNEL IGBT |
| 封裝： | MODULE-10 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 480K |
| 代理商： | 2MBI1200U4G-170 |
33
IGBT Modules
2MBI1200U4G-170
Reverse bias safe operating area (max.)
Vcc=900V, VGE=±15V, Rgon=4.7Ω, Rgoff=1.2Ω, Tj=125°C
Switching loss vs. Collector current (typ.)
Switching loss vs. Gate resistance (typ.)
Vcc=900V, Ic=1200A, VGE=±15V, Tj=125°C
±VGE=15V, Tj=125°C/chip
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=1200A, VGE=±15V, Tj=125°C
Vcc=900V, VGE=±15V, Rgon=4.7Ω, Rgoff=1.2Ω, Tj=125°C
Switching time vs. Collector current (typ.)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
400
800
1200
1600
2000
Switching
time
:ton,
tr,
toff,
tf
[us]
Collector current : Ic [A]
ton
toff
tr
tf
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0
2
4
6
8
10
12
14
Switching
time
:ton,
tr,
toff,
tf
[us]
Gate resistance : Rg [Ω]
tr
tf
toff
ton
0
100
200
300
400
500
600
700
800
900
1000
0
400
800
1200
1600
2000
Switching
loss
:Eon,
Eoff,
Err
[mJ/pulse]
Collector current : Ic [A], Forward current : IF [A]
Eon
Eoff
Err
0
100
200
300
400
500
600
700
800
900
1000
1100
0
2
4
6
8
10
12
14
Switching
loss
:Eon,
Eoff,
Err
[mJ/pulse]
Gate resistance : Rg [Ω]
Eoff
Err
Eon
0
400
800
1200
1600
2000
2400
2800
0
400
800
1200
1600
2000
Collector
current
:Ic
[A]
Collector-Emitter voltage : VCE [V]
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| 2MBI200N-060-03F | 200 A, 600 V, N-CHANNEL IGBT |
| 2MBI200N-060-03A | 200 A, 600 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2MBI1200UG-170 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT MODULE |
| 2MBI1400VXB-120P-50 | 制造商:Fuji Electric 功能描述:IGBT, MODULE, DUAL,1400A/1200V 制造商:Fuji Electric 功能描述:IGBT, MODULE, DUAL,1400A/1200V; Transistor Polarity:Dual N Channel; DC Collector Current:1.8kA; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:7.65kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case ;RoHS Compliant: Yes |
| 2MBI150-060 | 制造商:Fuji Electric 功能描述: |
| 2MBI150-120 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 150A I(C) |
| 2MBI150F-060 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE ( F Series ) |
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