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參數(shù)資料
| 型號： | 2MBI1200U4G-170 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 1600 A, 1700 V, N-CHANNEL IGBT |
| 封裝： | MODULE-10 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 480K |
| 代理商： | 2MBI1200U4G-170 |
2
2MBI1200U4G-170
2
IGBT Modules
Characteristics (Representative)
Dynamic Gate charge (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25°C, chip
Tj=125°C, chip
Tj=25°C, chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25°C
Tj=25°C
0
400
800
1200
1600
2000
2400
2800
0.0
1.0
2.0
3.0
4.0
5.0
Collector
current
:Ic
[A]
Collector-Emitter voltage : VCE [V]
VGE=20V 15V 12V
10V
8V
0
400
800
1200
1600
2000
2400
2800
0.0
1.0
2.0
3.0
4.0
5.0
Collector
current
:Ic
[A]
Collector-Emitter voltage : VCE [V]
VGE=20V 15V
12V
10V
8V
0
2
4
6
8
10
5
10
15
20
25
Collector-Emitter
voltage
:VCE
[V]
Gate-Emitter voltage : VGE [V]
Ic=2400A
Ic=1200A
Ic=600A
1
10
100
1000
0
10
20
30
Capacitance
:Cies,
Coes,
Cres
[nF]
Collector-Emitter voltage : VCE[V]
Cies
Coes
Cres
0
200
400
600
800
1000
0
1000
2000
3000
4000
5000
Gate charge : Qg [nC]
0
5
10
15
20
25
VGE
VCE
Collector-Emitter
voltage
:VCE
[V]
Gate-Emitter
voltage
:VGE
[V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=+15V, chip
0
400
800
1200
1600
2000
2400
2800
0.0
1.0
2.0
3.0
4.0
5.0
Collector
current
:Ic
[A]
Collector-Emitter voltage : VCE [V]
Tj=125°C
Tj=25°C
相關(guān)PDF資料 |
PDF描述 |
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| 2MBI200N-060-03C | 200 A, 600 V, N-CHANNEL IGBT |
| 2MBI200N-060-03B | 200 A, 600 V, N-CHANNEL IGBT |
| 2MBI200N-060-03F | 200 A, 600 V, N-CHANNEL IGBT |
| 2MBI200N-060-03A | 200 A, 600 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2MBI1200UG-170 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT MODULE |
| 2MBI1400VXB-120P-50 | 制造商:Fuji Electric 功能描述:IGBT, MODULE, DUAL,1400A/1200V 制造商:Fuji Electric 功能描述:IGBT, MODULE, DUAL,1400A/1200V; Transistor Polarity:Dual N Channel; DC Collector Current:1.8kA; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:7.65kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case ;RoHS Compliant: Yes |
| 2MBI150-060 | 制造商:Fuji Electric 功能描述: |
| 2MBI150-120 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 150A I(C) |
| 2MBI150F-060 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE ( F Series ) |
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